AOD450

AOD450 200V N-Channel MOSFET General Description Product Summary The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in inverter, load switching and general purpose applications. VDS ID (at VGS=10V) 200V 3.8A RDS(ON) (at VGS=10V) < 0.70Ω 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Units V ±30 V 3.8 ID TC=100°C Maximum 200 2.7 A Pulsed Drain Current C IDM 10 Avalanche Current C IAS 3 A Avalanche energy L=1.35mH C TC=25°C EAS 6 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 25 PD -55 to 175 Typ 17.1 50 4 °C Max 30 60 6 Units °C/W °C/W °C/W Rev. 2.0 June 2013 www.aosmd.com Page 1 of 6 AOD450 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V 200 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=15V, ID=3.8A 8.7 VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current G TJ=55°C VGS=10V, ID=3.8A TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 170 VGS=0V, VDS=25V, f=1MHz µA 5 3 Units V VDS=160V, VGS=0V IDSS Crss Max ±100 nA 6 V 0.55 0.7 1.1 1.32 Ω 5 215 S 1 V 6 A 260 pF 20 32 50 pF 3 7.2 15 pF 5.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 3.82 nC Qg(4.5V) Total Gate Charge 0.92 nC Qgs Gate Source Charge 1.42 nC Qgd Gate Drain Charge 1.47 nC tD(on) Turn-On DelayTime 6.3 ns tr Turn-On Rise Time 3.3 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=25V, ID=3.8A VGS=10V, VDS=25V, RL=6.5Ω, RGEN=3Ω 10.5 ns 2.8 ns IF=3.8A, dI/dt=100A/µs 59 Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs 142 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using