AOD454A

AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD454A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = 40V (VGS = 10V) ID = 20A RDS(ON) < 30mΩ (VGS = 10V) RDS(ON) < 40mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! -RoHS Compliant -Halogen Free* TO252 DPAK Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B,H Pulsed Drain Current TC=100°C Avalanche Current C Power Dissipation B C ±20 V TA=70°C Maximum Junction-to-Case F Alpha & Omega Semiconductor, Ltd. 15 IDM 40 IAR 14 EAR 9.8 mJ 18 W 2.5 1.6 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 37 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient ID PD TC=100°C TA=25°C Power Dissipation A Units V 20 C Repetitive avalanche energy L=0.1mH TC=25°C Maximum 40 RθJA RθJC Typ 16.7 40 3 °C Max 25 50 4 Units °C/W °C/W °C/W www.aosmd.com AOD454A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 40 TJ=55°C TJ=125°C 25 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 0.76 516 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=12A VGS=10V, VDS=20V, RL=1.6Ω, RGEN=3Ω nA V mΩ S 1 V 2.5 A 650 pF 82 pF 43 pF 4.6 Ω 8.3 10.8 nC 2.3 nC 1.6 nC 6.4 ns 3.6 ns 16.2 ns 6.6 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=12A, dI/dt=100A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 10 Body Diode Reverse Recovery Time µA A 40 VSD SWITCHING PARAMETERS Total Gate Charge Qg 30 46 IS Reverse Transfer Capacitance 24 30 VDS=5V, ID=12A Output Capacitance 3 37 Forward Transconductance Coss 2.5 VGS=4.5V, ID=8A gFS Crss 5 ±100 VGS=10V, ID=12A Units V VDS=40V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 40 IDSS RDS(ON) Typ 24 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using