AOD464

AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mΩ (VGS =10V) @ 20A RDS(ON) < 31 mΩ (VGS = 6V) 100% UIS Tested! 100% Rg Tested! -RoHS Compliant -Halogen Free* TO-252 D-PAK Top View D Bottom View D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A 28 IAR 20 A EAR 20 mJ 80 100 2.3 W 1.5 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B ±25 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V 40 TC=100°C Pulsed Drain Current Maximum 105 RθJA RθJC Typ 15 45 1 °C Max 18 55 1.5 Units °C/W °C/W °C/W www.aosmd.com AOD464 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V 105 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C VGS=10V, ID=20A TJ=125°C Static Drain-Source On-Resistance VGS=6V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Max VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A µA 5 100 nA 3.2 4 V 21.5 28 32 40 24 31 mΩ 1 V 55 A 2445 pF A mΩ 50 0.73 2038 VGS=0V, VDS=25V, f=1MHz Units V VDS=84V, VGS=0V IDSS RDS(ON) Typ S 204 pF 85 pF 1.3 1.56 Ω 38.5 46 nC 8 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 12.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 59.6 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 161 VGS=10V, VDS=50V, RL=2.7Ω, RGEN=3Ω 8.2 ns 31.5 ns 11.2 ns 74 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using