AOD478

AOD478/AOI478 100V N-Channel MOSFET General Description Product Summary The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 11A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 140mΩ RDS(ON) (at VGS = 4.5V) < 152mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TO251A IPAK Top View Bottom View D Bottom View Top View D D S G G G S D S G Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current ±20 V A 24 2.5 IDSM TA=70°C Units V 8 IDM TA=25°C Maximum 100 11 ID TC=100°C C S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS S D A 2 Avalanche Current C IAS, IAR 10 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 5 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: Nov. 2011 2.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s W 23 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 45 PD TC=100°C -55 to 175 Typ 17 55 2.7 °C Max 25 60 3.3 Units °C/W °C/W °C/W Page 1 of 6 AOD478/AOI478 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 Max 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 24 Units V VDS=100V, VGS=0V VGS(th) 100 nA 2.2 2.8 V 116 140 225 270 VGS=4.5V, ID=3A 121 152 mΩ 17 1 V 12 A VGS=10V, ID=4.5A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance A 0.76 mΩ S 350 445 540 pF 18 29 35 pF 9 16 23 pF 1 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 10.3 13 nC Qg(4.5V) Total Gate Charge 4 5.1 6.5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=4.5A VGS=10V, VDS=50V, RL=8.6Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs 1.6 nC 2.4 nC 8 ns 3 ns 17 ns 4.5 IF=4.5A, dI/dt=500A/µs ns 14.5 21 27.5 68 97 126 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using