AOD484

AOD484 30V N-Channel MOSFET General Description Features The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 10V) RDS(ON) < 23 mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D G S S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C TC=100°C Avalanche Current C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C V ID 20 80 IAR 15 A EAR 33 mJ 2.1 W 1.3 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 25 TJ, TSTG t ≤ 10s Steady-State Steady-State A 50 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case B ±20 IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 25 Pulsed Drain Current C Repetitive avalanche energy L=0.3mH TC=25°C Maximum 30 RθJA RθJC Typ 17 55 2.3 °C Max 25 60 3 Units °C/W °C/W °C/W www.aosmd.com AOD484 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=15A 5 ±100 nA 2.5 V 12.1 15 A 19 18.5 Forward Transconductance VDS=5V, ID=20A 26 VSD Diode Forward Voltage IS=1A, VGS=0V 0.71 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 938 VGS=0V, VDS=15V, f=1MHz µA 1.5 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ 23 mΩ 1 V 21 A S 1220 pF 142 pF 99 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 17.5 21 nC Qg(4.5V) Total Gate Charge 8.4 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 3 nC 4.1 nC 5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 12 ns 19 ns 6 ns IF=20A, dI/dt=100A/µs 19 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 10 21 12 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends 25 s it. on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and 25is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using