AOD4S60

AOD4S60/AOI4S60/AOU4S60 600V 4A α MOS TM Power Transistor General Description Product Summary The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 16A RDS(ON),max 0.9Ω Qg,typ 6nC Eoss @ 400V 1.5µJ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View TO251A IPAK Bottom View Top View Bottom View TO251 D Top View Bottom View D D G S S G AOD4S60 G S D G D S G G AOI4S60 Continuous Drain Current VGS TC=25°C TC=100°C S G S D S AOU4S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage D Maximum 600 Units V ±30 V 4 ID A 3 Pulsed Drain Current C IDM 16 Avalanche Current C IAR 1.6 A Repetitive avalanche energy C EAR 38 mJ Single pulsed avalanche energy H TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt Junction and Storage Temperature Range EAS 77 mJ PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F RθJC Rev3: Jan 2012 56.8 W 0.45 100 20 -55 to 150 W/ oC 300 °C V/ns °C Typical Maximum 45 55 °C/W -1.8 0.5 2.2 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOD4S60/AOI4S60/AOU4S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.9 3.5 4.1 nΑ V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A, TJ=25°C - 0.78 0.9 Ω VGS=10V, ID=2A, TJ=150°C - 2 2.4 Ω VSD Diode Forward Voltage IS=2A,VGS=0V, TJ=25°C - 0.81 - V IS Maximum Body-Diode Continuous Current - - 4 A ISM Maximum Body-Diode Pulsed CurrentC - - 16 A - 263 - pF - 21 - pF - 17.1 - pF - 47.7 - pF VGS=0V, VDS=100V, f=1MHz - 0.75 - pF VGS=0V, VDS=0V, f=1MHz - 18 - Ω - 6 - nC - 1.6 - nC nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=2A Qgs Gate Source Charge Qgd Gate Drain Charge - 1.8 - tD(on) Turn-On DelayTime - 18 - ns tr Turn-On Rise Time - 8 - ns - 40 - ns - 12 - ns IF=2A,dI/dt=100A/µs,VDS=400V tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=400V, ID=2A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current - 177 - ns Irm IF=2A,dI/dt=100A/µs,VDS=400V - 12 - Qrr Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=400V - 1.5 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using