AOD528

AOD528 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application ID (at VGS=10V) 30V 50A RDS(ON) (at VGS=10V) < 5.4mΩ RDS(ON) (at VGS = 4.5V) < 9.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial TO252 DPAK TopView D Bottom View D D S D G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C V A 163 17 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 A 13 IAS 25 A Avalanche energy L=0.1mH C EAS 31 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev 0: Dec 2012 2.5 Steady-State Steady-State RθJA RθJC W 1.6 -55 to 175 TJ, TSTG Symbol t ≤ 10s W 25 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 Typ 16 41 2.5 www.aosmd.com °C Max 20 50 3 Units °C/W °C/W °C/W Page 1 of 6 AOD528 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=10V, VDS=15V, ID=20A µA 5 1.6 0.7 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 2 100 nA 2.4 V 4.3 5.4 5.4 6.8 7.5 9.5 91 0.7 mΩ mΩ S 1 V 46 A 1187 1400 pF 483 600 pF 60 100 pF 1.5 2.3 Ω 18 nC 8.8 nC 4.1 nC Qgs Gate Source Charge Qgd Gate Drain Charge 3.6 nC tD(on) Turn-On DelayTime 7.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 10.5 ns 21.8 ns 5 ns 14.7 ns nC 24 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using