AOD5B65N1

AOD5B65N1 650V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very low turn-off switching loss with softness • Fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Very good EMI behavior • Short-circuit ruggedness VCE IC (TC=100°C) 650V 5A VCE(sat) (TJ=25°C) 2V Applications • Motor Drives • Home Appliance and Fan Motor Applications • Other Hard Switching Applications TO-252 DPAK Top View C Bottom View C C G E G E G E AOD5B65N1 Orderable Part Number Package Type Form Minimum Order Quantity AOD5B65N1 TO252 Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOD5B65N1 Collector-Emitter Voltage V CE 650 Gate-Emitter Voltage V GE ±30 2500 Units V V Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax I CM 15 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 15 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax Short circuit withstanding time 1) VGE=15V, VCC≤300V, TJ≤150°C Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range IC IF 10 5 6.6 2.6 A I FM 15 A t SC 5 µs PD T J , T STG 52 21 -55 to 150 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics AOD5B65N1 Parameter Symbol R θ JA Maximum Junction-to-Ambient 55 Maximum IGBT Junction-to-Case R θ JC 2.4 Maximum Diode Junction-to-Case R θ JC 6.8 1) Allowed number of short circuits: 1s. Rev.1.0: January 2016 A www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V 2.5 V CE(sat) VGE=15V, IC=5A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=5A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 2 TJ=125°C - 2.5 - TJ=150°C - 2.64 - V TJ=25°C - 2.13 2.7 TJ=125°C - 2.21 - TJ=150°C - 2.17 - - 5.2 - V V TJ=25°C - - 10 TJ=125°C - - 100 TJ=150°C - - 500 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=5A - 3.1 - S - 230 - pF - 20 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 6.6 - pF Qg Total Gate Charge - 9.2 - nC Q ge Gate to Emitter Charge - 2.2 - nC Q gc Gate to Collector Charge - 4.3 - nC - 24 - A VGE=0V, VCC=0V, f=1MHz Gate resistance Rg SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 20 - Ω t D(on) Turn-On DelayTime - 8 - ns tr Turn-On Rise Time - 14 - ns - 73 - ns - 16 - ns - 0.081 - mJ I C(SC) VGE=15V, VCC=520V, IC=5A VGE=15V, VCC=300V, tsc≤5us, TJ≤150°C Short circuit collector current t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy E off Turn-Off Energy - 0.049 - mJ E total t rr Total Switching Energy - 0.13 - mJ Diode Reverse Recovery Time - 170 - Q rr Diode Reverse Recovery Charge - 0.19 - ns µC I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=150°C) - 2.5 - A t D(on) Turn-On DelayTime - 7 - ns tr Turn-On Rise Time - 16 - ns t D(off) Turn-Off Delay Time - 88 - ns tf Turn-Off Fall Time - 26 - ns E on Turn-On Energy - 0.09 - mJ E off Turn-Off Energy - 0.089 - mJ E total t rr Total Switching Energy - 0.179 - mJ - 273 - Q rr Diode Reverse Recovery Charge - 0.34 - ns µC I rm Diode Peak Reverse Recovery Current - 3.2 - A TJ=25°C VGE=15V, VCC=400V, IC=5A, RG=60Ω TJ=25°C IF=5A, dI/dt=200A/µs, VCC=400V TJ=150°C VGE=15V, VCC=400V, IC=5A, RG=60Ω Diode Reverse Recovery Time TJ=150°C IF=5A, dI/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2016 www.aosmd.com Page 2 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 15 20V 17V 17V 16 20V 12 15V 15V IC (A) 13V 11V 8 9 IC (A) 12 13V 11V 6 9V 9V 4 3 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 12 4 5 6 7 12 VCE=20V 10 10 8 -40°C 8 150°C IF (A) IC (A) 3 VCE (V) Figure 2: Output Characteristic (Tj=150°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 6 4 25°C 6 150°C 4 25°C -40°C 2 2 0 0 3 6 9 12 15 0 1 VGE (V) Figure 3: Transfer Characteristic 2 3 4 5 VF (V) Figure 4: Diode Characteristic 7 4 6 3.5 5 3 IC=10A 4 3 VSD (V) VCE(sat) (V) 10A IC=5A 2 2.5 5A 2 1.5 IC=2.5A 1 IF=2.5A 1 0 0.5 0 25 50 75 100 125 150 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: January 2016 www.aosmd.com 0 25 50 75 100 125 150 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=5A 12 Capacitance (pF) VGE (V) 1000 9 6 Cies 100 Coes 10 3 Cres 0 1 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 8 16 24 32 40 VCE (V) Figure 8: Capacitance Characteristic 60 Power Disspation (W) 50 40 30 20 10 0 25 50 75 100 125 150 12 1E-03 10 1E-04 8 1E-05 ICE(S) (A) Current rating IC (A) TCASE (°C) Figure 10: Power Disspation as a Function of Case 6 VCE=650V 1E-06 4 1E-07 2 1E-08 0 VCE=520V 1E-09 25 50 75 100 125 150 Rev.1.0: January 2016 0 25 50 75 100 125 150 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) Switching Time (ns) 10000 100 10 1000 1 100 10 1 2 4 6 8 IC (A) Figure 13: Switching Time vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=60Ω) 10000 10 0 1000 150 300 450 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=5A) 600 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) Td(off) Tf Td(on) Tr 100 4 3 10 2 1 1 25 50 75 100 125 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=5A, Rg=60Ω) Rev.1.0: January 2016 150 www.aosmd.com 0 25 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.5 0.5 Eoff 0.4 Eon 0.4 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eoff Eon 0.3 0.2 0.1 Etotal 0.3 0.2 0.1 0 0 2 4 6 8 IC (A) Figure 17: Switching Loss vs. IC (Tj=150°C, VGE=15V, VCE=400V, Rg=60Ω) 0 10 150 0.3 450 600 0.3 Eoff Eoff Eon 0.25 Eon 0.25 Etotal Switching Energy (mJ) Switching Energy (mJ) 300 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=150°C, VGE=15V, VCE=400V, IC=5A) 0.2 0.15 0.1 0.05 Etotal 0.2 0.15 0.1 0.05 0 0 25 50 75 100 125 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=5A, Rg=60Ω) Rev.1.0: January 2016 150 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=150°C, VGE=15V, IC=5A, Rg=60Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 15 400 12 320 9 240 30 200 Trr (ns) 25°C Irm (A) Qr (nC) 300 6 Qrr 18 25°C Trr 160 12 S 150°C 100 3 80 0 0 0 4 6 8 10 IF(A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 300 15 400 12 320 9 240 Irm (A) Qrr (nC) 150°C 2 Qrr 25°C 200 Trr (ns) 500 400 25°C 150°C 0 2 6 Irm 4 6 8 10 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 30 24 150°C 18 Trr S 25°C 24 150°C 150°C S 500 25°C 6 160 3 80 0 0 12 150°C 100 25°C 150°C 0 100 150 250 300 350 400 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=5A) Rev.1.0: January 2016 200 S Irm 6 25°C 0 100 www.aosmd.com 150 200 250 300 350 400 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=5A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=6.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: January 2016 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: January 2016 www.aosmd.com Page 9 of 9