AOD5N40

AOD5N40/AOI5N40 400V,4.2A N-Channel MOSFET General Description Product Summary The AOD5N40 & AOI5N40 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View Bottom View VDS 500V@150℃ ID (at VGS=10V) 4.2A RDS(ON) (at VGS=10V) < 1.6Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Bottom View Top View D D D G G S S G AOI5N40 AOD5N40 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C S D D S G G S Maximum 400 Units V ±30 V 4.2 ID 2.8 A IDM 10 Avalanche Current C IAR 1.7 A Repetitive avalanche energy C EAR 43 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 86 5 78 mJ V/ns W 0.63 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev1: Jan 2012 PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 38 Maximum 55 Units °C/W 1.33 0.5 1.6 °C/W °C/W www.aosmd.com Page 1 of 6 AOD5N40/AOI5N40 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 500 V ID=250µA, VGS=0V 0.4 V/ oC VDS=400V, VGS=0V 1 VDS=320V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ±100 3.4 µA 4 4.5 nΑ V 1.6 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 1.25 gFS Forward Transconductance VDS=40V, ID=1A 5 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 4.2 A ISM Maximum Body-Diode Pulsed Current 10 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=320V, ID=4.2A S 0.77 260 331 400 pF 25 42 60 pF 1.5 3 5.5 pF 2 4 6 Ω 5.5 6.9 8.5 nC 1.5 2.0 2.5 nC 1 2.3 3.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=4.2A,dI/dt=100A/µs,VDS=100V 125 160 200 Qrr Body Diode Reverse Recovery Charge IF=4.2A,dI/dt=100A/µs,VDS=100V 0.7 0.93 1.2 Body Diode Reverse Recovery Time VGS=10V, VDS=200V, ID=4.2A, RG=25Ω 16.5 ns 15 ns 24 ns 11.5 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using