AOD5N50

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. 600V@150℃ VDS ID (at VGS=10V) 5A < 1.6Ω RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Repetitive avalanche energy C Single plused avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev0: June 2010 Units V ±30 V 5 ID 3.1 IDM Avalanche Current C Maximum 500 A 17 IAR 2.8 A EAR 118 mJ EAS dv/dt 235 5 104 mJ V/ns W 0.83 -50 to 150 W/ oC °C 300 °C PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 43 Maximum 55 Units °C/W 1 0.5 1.2 °C/W °C/W Page 1 of 6 AOD5N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V VDS=500V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 1 µA 10 ±100 4.1 4.5 nΑ V VGS=10V, ID=2.5A 1.2 1.6 Ω VDS=40V, ID=2.5A 5 1 V DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V/ C 0.6 VDS=400V, TJ=125°C IGSS Coss V o VGS(th) ISM 600 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=400V, ID=5A 3.4 0.76 S 5 A 17 A 430 538 670 pF 40 58 80 pF 2.5 4.5 7 pF 1.2 2.3 3.5 Ω 9 11.5 14 nC 3 3.8 4.6 nC 2 4.1 6.2 nC VGS=10V, VDS=250V, ID=5A, RG=25Ω 18 ns 32 ns 34 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V 145 182 220 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 1.7 2.2 2.7 22 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using