AOD603A

AOD603A 60V Complementary MOSFET General Description Product Summary N-Channel The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. TO252-4L DPAK Top View P-Channel VDS= 60V -60V ID= 13A (VGS=10V, silicon limit) -13A (VGS=-10V, silicon limit) RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115mΩ (VGS=-10V) < 85mΩ (VGS=4.5V) < 150mΩ (VGS=-4.5V) 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested D1 Bottom View D2 D1/D2 PIN1 D1/D2 S2 S1 G1 G2 G2 S1 G1 S2 N-channel P-channel PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C (silicon limit) Continuous Drain Current TC=25°C G Pulsed Drain Current C IDM TA=25°C Continuous Drain Current Avalanche Current ID TC=100°C IDSM TA=70°C C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter N-channel Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Parameter P-channel Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 2.0: April. 2020 t ≤ 10s Steady-State Steady-State t ≤ 10s Steady-State Steady-State Units V ±20 ±20 V 13.6 -13.4 12 -12 9.5 -9.5 30 -30 3.5 -3 3 -2.5 A A 19 25 A EAS, EAR 18 31 mJ 27 42.5 13.5 21.5 W 2 2 1.3 1.3 TJ, TSTG -55 to 175 -55 to 175 °C Symbol Typ 19 50 4 Typ 19 50 2.5 Max 23 60 5.5 Max 23 60 3.5 Units °C/W °C/W °C/W Units °C/W °C/W °C/W PDSM TA=70°C Max P-channel -60 IAS, IAR PD TC=100°C Max N-channel 60 RqJA RqJC Symbol RqJA RqJC www.aosmd.com W Page 1 of 11 AOD603A N-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250mA 1 VGS=10V, VDS=5V 30 TJ=55°C 5 VGS=10V, ID=12A ±100 nA 3 V 47 60 90 110 85 A Static Drain-Source On-Resistance VGS=4.5V, ID=8A 67 gFS Forward Transconductance VDS=5V, ID=12A 22 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G 0.74 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz mA 2.4 RDS(ON) TJ=125°C Units V 1 Zero Gate Voltage Drain Current Coss Max 60 VDS=60V, VGS=0V IDSS ID(ON) Typ mW mW S 1 V 12 A 450 pF 61 pF 27 pF 1.35 2 W SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.5 12 nC Qg(4.5V) Total Gate Charge 3.8 7 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=12A 0.6 Qgs Gate Source Charge 1.2 nC Qgd Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 4.2 ns tr Turn-On Rise Time 3.4 ns tD(off) Turn-Off DelayTime 16 ns tf trr Turn-Off Fall Time 2 ns IF=12A, dI/dt=100A/ms 27 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/ms 30 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using