AOD607

AOD607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. n-channel p-channel -30V VDS (V) = 30V -12A (VGS = -10V) ID = 12A (VGS=10V) RDS(ON) RDS(ON) < 25 mΩ (VGS=10V) < 37 mΩ (VGS = -10V) < 34 mΩ (VGS=4.5V) < 62 mΩ (VGS = -4.5V) 100% UIS Tested! -RoHS Compliant -Halogen Free* TO-252-4L D-PAK D1/D2 Top View Bottom View D1/D2 Top View Drain Connected to Tab G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS 30 Drain-Source Voltage VGS Gate-Source Voltage ±20 Pulsed Drain Current Avalanche Current TC=100°C C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A C TC=25°C TC=100°C TA=25°C TA=70°C Max p-channel -30 Units V ±20 V -12 ID IDM 9.4 -9.4 40 -40 IAR 18 -18 A EAR 40 40 mJ 25 25 12.5 12.5 2.1 2.1 1.3 1.3 -55 to 175 -55 to 175 PD PDSM TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. p-channel 12 TC=25°C C S2 n-channel G1 Continuous Drain G Current G2 S1 G2 Symbol RθJA RθJC RθJA RθJC A W W °C Device n-ch n-ch n-ch Typ 19 47 4.5 Max 23 60 6 °C/W °C/W °C/W p-ch p-ch p-ch 19 47 4.5 23 60 6 °C/W °C/W °C/W www.aosmd.com AOD607 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ 5 µA 100 nA 1.7 2.5 V 20 25 28 34 27.5 34 A 25 0.75 mΩ mΩ S 1 V IS Maximum Body-Diode Continuous Current 18 A ISM Pulsed Body-Diode CurrentC 40 A 1250 pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1040 VGS=0V, VDS=15V, f=1MHz Qgs Gate Source Charge pF 110 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 180 VGS=10V, VDS=15V, ID=12A pF 0.7 1.5 Ω 19.8 25 nC 9.8 12.5 nC 2.5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 3.9 ns 17.4 ns 3.2 ns VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 19 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 8 25 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using