AOD607A

AOD607A 30V Dual Complementary MOSFET General Description Product Summary • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • Excellent Thermal Performance • RoHS and Halogen-Free Compliant VDS Applications Q1 30V Q2 -30V ID (at VGS=10V) 8A -12A RDS(ON) (at VGS=10V) < 25mΩ < 27mΩ RDS(ON) (at VGS=4.5V) < 38mΩ < 45mΩ 100% UIS Tested 100% Rg Tested • Pch+Nch Complementary MOSFET for DC-FAN TO252-4L DPAK Top View D1 D2 Bottom View D1/D2 G1 G2 PIN1 D1/D2 S2 G1 S1 G2 S1 S2 PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AOD607A TO-252-4L Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Avalanche Current C C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C C ±20 V 8 -12 8 -9.4 44 -48 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2016 8 12 9.5 IAS 12 -18 A EAS 7 16 mJ VSPIKE 36 -36 V 19 30 7.5 12 PDSM TA=70°C Steady-State Steady-State 6.2 6.2 4.0 RθJA RθJC -55 to 150 Typ Q1 15 40 5.0 www.aosmd.com Typ Q2 15 40 3.2 Max Q1 20 50 6.5 A W 4.0 TJ, TSTG Symbol t ≤ 10s A 8 PD TC=100°C TA=25°C Power Dissipation A ±20 IDSM TA=70°C Power Dissipation B Units V IDM TA=25°C Continuous Drain Current G Max Q2 -30 ID TC=100°C Pulsed Drain Current Max Q1 30 W °C Max Q2 20 50 4.2 Units °C/W °C/W °C/W Page 1 of 200 AOD607A Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 5 1.5 VGS=10V, ID=8A 100 nA 2.6 V 20.5 25 31.5 39 38 Static Drain-Source On-Resistance VGS=4.5V, ID=5A 28 gFS Forward Transconductance VDS=5V, ID=8A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz mΩ mΩ S 1 V 8 A 395 pF 67 pF 41 pF 1.8 2.8 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.2 15 nC Qg(4.5V) Total Gate Charge 3.5 7 nC VGS=10V, VDS=15V, ID=8A 0.9 µA 2.1 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Max Ω Qgs Gate Source Charge 1.3 nC Qgd Gate Drain Charge 1.7 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=8A, di/dt=500A/µs 6.6 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1.87Ω, RGEN=3Ω 2.7 ns 14.9 ns 2.9 ns 6.0 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6.5°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2016 www.aosmd.com Page 4 of 200 AOD607A 25 10 20 8 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 5 0 6 4 2 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PDM Single Pulse 0.01 Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2016 www.aosmd.com Page 5 of 200 AOD607A Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250µA -1 TJ=55°C -5 -1.3 VGS=-10V, ID=-12A ±100 nA -2.4 V 22 27 32 40 45 Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A 33 gFS Forward Transconductance VDS=-5V, ID=-12A 19 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -0.75 f=1MHz mΩ mΩ S -1 V 12 A 730 VGS=0V, VDS=-15V, f=1MHz µA -1.85 RDS(ON) TJ=125°C Units V VDS=-30V, VGS=0V IDSS Max pF 140 pF 90 pF 2.1 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13.6 24 nC Qg(4.5V) Total Gate Charge 6.7 12 nC VGS=-10V, VDS=-15V, ID=-12A Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 8 ns 6 ns VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=500A/µs Body Diode Reverse Recovery Time IF=-12A, dI/dt=500A/µs 17 ns 5 ns 12 ns nC 25.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.2°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2016 www.aosmd.com Page 8 of 200 AOD607A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 20 30 Power Dissipation (W) 16 Current rating -ID (A) 25 20 15 10 5 12 0 8 4 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2016 www.aosmd.com Page 9 of 200 AOD607A Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: November 2016 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 200 AOD607A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.1.0: November 2016 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 11 of 200