AOD609

AOD609 Complementary Enhancement Mode Field Effect Transistor General Description The AOD609/L uses advanced trench technology MOSFETs to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AOD609 and AOD609L are electrically identical. -RoHS Compliant -AOD609L is Halogen Free Features n-channel VDS (V) = 40V, I D = 12A (V GS=10V) RDS(ON)< 30m Ω (VGS=10V) RDS(ON)< 40m Ω (VGS=4.5V) p-channel VDS (V) = -40V, I D = -12A (V GS=-10V) RDS(ON)< 45m Ω (VGS= -10V) RDS(ON)< 66m Ω (VGS= -4.5V) D2 D1 TO-252-4L D-PAK D1/D2 Top View Drain Connected to Tab G2 S2 G1 S1 S2 G2 S1 G1 n-channel p-channel Max p-channel -40 ±20 -12 -12 -30 -20 20 30 15 2 1.3 -55 to 175 mJ W W °C A Units V V Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Continuous Drain Current B,H Pulsed Drain Current Avalanche Current C C B TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C TC=100°C TA=25°C TA=70°C 12 12 30 14 9.8 27 14 2 1.3 -55 to 175 Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C A,D t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJC RθJA RθJC Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 17.4 50 4 16.7 50 3.5 Max 25 60 5.5 25 60 5 Units °C/W °C/W °C/W °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD609 N Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=40V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, I D=12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=8A Forward Transconductance VDS=5V, ID=12A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1.7 30 24 37 31 25 0.76 1 2 516 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 82 43 4.6 8.3 2.3 1.6 6.4 VGS=10V, VDS=20V, RL=1.4Ω, RGEN=3Ω IF=12A, dI/dt=100A/ µs IF=12A, dI/dt=100A/ µs 3.6 16.2 6.6 18 10 24 6.9 10.8 650 30 46 40 S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC mΩ 2.5 Min 40 1 5 ±100 3 Typ Max Units V µA nA V A STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VGS=10V, VDS=20V, ID=12A A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R JC and case to ambient. θ E. The static characteristics in Figures 1 to 6 are obtained using