AOD609G

AOD609G Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. n-channel VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30mW (VGS=10V) RDS(ON)< 40mW (VGS=4.5V) p-channel VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45mW (VGS= -10V) RDS(ON)< 66mW (VGS= -4.5V) 100% UIS Tested! 100% Rg Tested! -RoHS Compliant -Halogen Free* Top View TO-252-4L D-PAK D1/D2 Top View Drain Connected to Tab Bottom View D1/D2 G1 S2 S1 n-channel G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 40 VGS Gate-Source Voltage Continuous Drain Current B,H TC=25°C TC=100°C G2 S1 G2 S2 p-channel Max p-channel -40 ±20 ±20 12 -12 V ID 12 -12 Pulsed Drain Current B IDM 30 -30 Avalanche Current C IAR 14 -20 Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation TC=100°C EAR 9.8 20 27 30 14 15 2 2 1.3 1.3 -55 to 175 -55 to 175 Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range PD PDSM TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Lead C Rev 1.0: May 2018 Symbol RqJA RqJC RqJA RqJC www.aosmd.com Units V A mJ W W °C Device n-ch n-ch n-ch Typ 17.4 50 4 Max 25 60 5.5 Units °C/W °C/W °C/W p-ch p-ch p-ch 16.7 50 3.5 25 60 5 °C/W °C/W °C/W Page 1 of 9 AOD609G N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 ±100 VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 2.5 3 24 30 37 46 31 40 25 VGS=0V, VDS=20V, f=1MHz VGS=10V, VDS=20V, ID=12A 1.6 nA V mW S 1 V 2 A 545 pF 65 pF 40 VGS=0V, VDS=0V, f=1MHz mA A 0.76 DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current gFS Max 40 VDS=40V, VGS=0V IDSS Coss Typ pF 3.2 4.8 W 10 13 nC 2 nC 2.2 nC 5.5 ns VGS=10V, VDS=20V, RL=1.4W, RGEN=3W 3 ns 19 ns 4 ns IF=12A, dI/dt=100A/ms 13 Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/ms 6.5 ns nC Body Diode Reverse Recovery Time A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using the steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using