AOD66920

AOD66920 100V N-Channel AlphaSGT General Description TM Product Summary VDS • Trench Power AlphaSGT TM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 100V 70A RDS(ON) (at VGS=10V) < 8.2mΩ RDS(ON) (at VGS=4.5V) < 10.7mΩ 100% UIS Tested 100% Rg Tested • High Frequency Switching and Synchronous Rectification TO252 DPAK TopView D Bottom View D D D S G G S S G Orderable Part Number Package Type Form Minimum Order Quantity AOD66920 TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: June 2019 IAS 38 A EAS 72 mJ 89 Steady-State Steady-State RqJA RqJC www.aosmd.com W 35.5 6.2 W 4.0 TJ, TSTG Symbol t ≤ 10s A 15.5 PDSM TA=70°C A 19.5 PD TA=25°C A V 180 IDSM TA=70°C ±20 46.5 IDM TA=25°C Continuous Drain Current Units V 70 ID TC=100°C Maximum 100 -55 to 150 Typ 15 40 1.15 °C Max 20 50 1.4 Units °C/W °C/W °C/W Page 1 of 6 AOD66920 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 5 nA 2.5 V 6.7 8.2 11.6 14 VGS=4.5V, ID=20A 8.5 10.7 TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A 65 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=20A 0.5 mΩ mΩ S 1 V 70 A 2500 pF 485 pF 13 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) μA ±100 Static Drain-Source On-Resistance Output Capacitance Units 2.0 1.5 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ pF 1.1 1.7 Ω 35 50 nC 16.7 25 nC 8 nC 5 nC 44 10 nC ns 4 ns 31 ns 6 ns IF=20A, di/dt=500A/ms 34 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 170 ns nC Body Diode Reverse Recovery Time VGS=0V, VDS=50V VGS=10V, VDS=50V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=1.4°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: June 2019 www.aosmd.com Page 4 of 6 AOD66920 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 60 Current rating ID (A) Power Dissipation (W) 80 60 40 20 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 3 TA=25°C Power (W) Eoss(uJ) 1000 2 100 1 10 0 0 25 50 75 100 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZqJA Normalized Transient Thermal Resistance 0.001 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=50°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: June 2019 www.aosmd.com Page 5 of 6 AOD66920 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) Test Unclamped Inductive TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: June 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6