AOD6N50

AOD6N50 500V,5.3A N-Channel MOSFET General Description Product Summary The AOD6N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS 600V@150℃ ID (at VGS=10V) 5.3A RDS(ON) (at VGS=10V) < 1.4Ω 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Maximum 500 Units V ±30 V 5.3 ID 3.3 A IDM 17 Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 118 mJ Single plused avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 235 5 104 mJ V/ns W 0.83 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev0: April 2012 PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 43 Maximum 55 Units °C/W 1 0.5 1.2 °C/W °C/W Page 1 of 6 AOD6N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V VDS=500V, VGS=0V 0.6 V V/ oC 1 VDS=400V, TJ=125°C 10 ±100 3.4 µA 4.1 4.5 nΑ V 1.4 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A 1.2 gFS Forward Transconductance VDS=40V, ID=2.5A 5 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 5 A ISM Maximum Body-Diode Pulsed Current 17 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=5A S 0.76 430 538 670 40 58 80 pF 2.5 4.5 7 pF 1.2 2.3 3.5 Ω 9 11.5 14 nC 3 3.8 4.6 nC 2 4.1 6.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5A,dI/dt=100A/µs,VDS=100V 145 182 220 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 1.7 2.2 2.7 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=5A, RG=25Ω pF 18 ns 32 ns 34 ns 22 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using