AOD7S60

AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 33A RDS(ON),max 0.6Ω Qg,typ 8.2nC Eoss @ 400V 1.9µJ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View TO251 D Top View Bottom View Bottom View D D G S G S G D G S S D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current VGS TC=25°C TC=100°C S AOU7S60 AOD7S60 Gate-Source Voltage G Maximum 600 Units V ±30 V 7 ID 5 A Pulsed Drain Current C IDM 33 Avalanche Current C IAR 1.7 A Repetitive avalanche energy C EAR 43 mJ Single pulsed avalanche energy H TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt Junction and Storage Temperature Range EAS 86 mJ PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F RθJC Rev0: Aug 2011 83 W 0.7 100 20 -55 to 150 W/ oC 300 °C V/ns °C Typical Maximum 45 55 °C/W -1.2 0.5 1.5 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOD7S60/AOU7S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.7 3.3 3.9 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=3.5A, TJ=25°C - 0.54 0.6 Ω VGS=10V, ID=3.5A, TJ=150°C - 1.48 1.64 Ω IS=3.5A,VGS=0V, TJ=25°C - 0.82 - V Maximum Body-Diode Continuous Current - - 7 A Maximum Body-Diode Pulsed CurrentC - - 33 A - 372 - pF - 28 - pF - 22 - pF - 65 - pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz - 1.2 - pF VGS=0V, VDS=0V, f=1MHz - 17.5 - Ω - 8.2 - nC - 2.0 - nC SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=3.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 2.8 - nC tD(on) Turn-On DelayTime - 19 - ns tr Turn-On Rise Time - 13 - ns tD(off) Turn-Off DelayTime - 50 - ns tf trr Turn-Off Fall Time - 15 - ns VGS=10V, VDS=400V, ID=3.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=3.5A,dI/dt=100A/µs,VDS=400V - 198 - ns Irm IF=3.5A,dI/dt=100A/µs,VDS=400V - 18 - Qrr Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V - 2.4 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using