AOD7S65

AOD7S65/AOU7S65/AOI7S65 650V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 750V IDM 30A RDS(ON),max 0.65Ω Qg,typ 9.2nC Eoss @ 400V 2µJ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View Bottom View TO251A IPAK TO251 Top View Bottom View Top View D Bottom View D D G S S S G G D S D S G G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C TC=100°C S D G G S AOI7S65 AOU7S65 AOD7S65 Continuous Drain Current D Maximum 650 Units V ±30 V 7 ID 5 A Pulsed Drain Current C IDM 30 Avalanche Current C IAR 1.7 A Repetitive avalanche energy C EAR 43 mJ Single pulsed avalanche energy H TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt Junction and Storage Temperature Range EAS 86 mJ PD dv/dt TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F RθJC Rev1: Nov 2012 89 W 0.7 100 20 -55 to 150 W/ oC 300 °C V/ns °C Typical Maximum 45 55 °C/W -1.1 0.5 1.4 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOD7S65/AOU7S65/AOI7S65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 650 - - ID=250µA, VGS=0V, TJ=150°C 700 750 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V - - 1 VDS=520V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.6 3.3 4 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=3.5A, TJ=25°C - 0.54 0.65 Ω VGS=10V, ID=3.5A, TJ=150°C - 1.48 1.64 Ω IS=3.5A,VGS=0V, TJ=25°C - 0.82 - V Maximum Body-Diode Continuous Current - - 7 A Maximum Body-Diode Pulsed CurrentC - - 30 A - 434 - pF - 30 - pF - 23 - pF - 80 - pF DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related I VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related J Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz - 1 - pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz - 17.5 - Ω - 9.2 - nC - 2.5 - nC Co(tr) SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=3.5A Qgs Gate Source Charge Qgd Gate Drain Charge - 2.7 - nC tD(on) Turn-On DelayTime - 21 - ns tr Turn-On Rise Time - 14 - ns tD(off) Turn-Off DelayTime - 55 - ns tf trr Turn-Off Fall Time - 15 - ns IF=3.5A,dI/dt=100A/µs,VDS=400V VGS=10V, VDS=400V, ID=3.5A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current - 224 - ns Irm IF=3.5A,dI/dt=100A/µs,VDS=400V - 19 - Qrr Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V - 2.8 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using