AOE6930

AOE6930 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant VDS 30V 30V ID (at VGS=10V) 22A 85A RDS(ON) (at VGS=10V) < 4.3mΩ < 0.83mΩ RDS(ON) (at VGS=4.5V) < 7.0mΩ < 1.05mΩ Applications 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Non-Isolated DC/DC Converters in Telecom and Industrial DFN 5X6E D2/S1 G2 G1 PIN1 S1/D2 S2 D1 G1 S1/D2 D1 8 1 2 Q1 Q2 S2 3 7 G2 8 G2 1 G1 2 S1/D2 D2/S1 D2/S1 7 6 D2/S1 D2/S1 6 3 D1 5 D2/S1 5 4 D1 S2 D1 D1 D1 4 D1 PIN Bottom View Top View Bottom View Top View D2/S1 Orderable Part Number Package Type Form Minimum Order Quantity AOE6930 DFN 5x6E Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Max Q2 30 Units V ±20 ±12 V 22 85 22 85 88 340 ID TC=100°C C IDM TA=25°C Avalanche energy L=0.01mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C 48 IAS 50 80 A EAS 13 32 mJ V PD PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1. 60 19 VSPIKE TA=25°C t ≤ 10s Steady-State Steady-State A 22 G IDSM TA=70°C Avalanche Current C Rev.2.0 : June 2015 Max Q1 30 36 36 24 75 9.6 30 4.1 5 2.6 3.2 A W W TJ, TSTG -55 to 150 °C Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 23 20 30 25 45 40 60 50 4 1.25 5.2 1.65 Units °C/W °C/W °C/W RθJA RθJC www.aosmd.com Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 5 1.3 VGS=10V, ID=20A ±100 nA 2.1 V 3.5 4.3 5.0 6.2 7.0 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 5.2 gFS Forward Transconductance VDS=5V, ID=20A 85 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 0.2 µA 1.7 RDS(ON) Coss Units 30 VDS=30V, VGS=0V IDSS Max mΩ mΩ S 1 V 22 A 1075 pF 480 pF 55 pF 1.0 2.0 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 15 25 nC Qg(4.5V) Total Gate Charge 7 15 nC Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 2.5 nC Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, ID=20A VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4.5 ns 4 ns 19 ns 3 ns IF=20A, dI/dt=500A/µs 12.5 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 21.5 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.2°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : June 2015 www.aosmd.com Page 4 of 10 30 30 25 25 20 20 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 5 15 10 0 5 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=60°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : June 2015 www.aosmd.com Page 5 of 10 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 5 1.2 VGS=10V, ID=30A ±100 nA 1.9 V 0.65 0.83 0.95 1.2 1.05 Static Drain-Source On-Resistance VGS=4.5V, ID=30A 0.8 gFS Forward Transconductance VDS=5V, ID=20A 278 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz mΩ mΩ S 1 V 85 A 5560 pF 1670 pF 200 pF 1.0 2.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 95 150 nC Qg(4.5V) Total Gate Charge 42 65 Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 0.2 µA 1.5 RDS(ON) Coss Units 30 VDS=30V, VGS=0V IDSS Max 11.5 nC nC 12 nC 11.5 nC 12 nC 12.5 ns 27 ns 66.5 ns 13 ns 23 ns nC 72.5 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.65°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : June 2015 www.aosmd.com Page 8 of 10 100 100 80 80 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : June 2015 www.aosmd.com Page 9 of 10 Figure A: Gate Charge Circuit & Waveforms Gate Charge Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Resistive Switching Switching Test Test Circuit Circuit && Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped Unclamped Inductive Inductive Switching Switching (UIS) (UIS)Test TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Diode Recovery Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0 : June 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10