AOE6932

AOE6932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications Q1 Q2 VDS 30V 30V ID (at VGS=10V) 55A 85A RDS(ON) (at VGS=10V) < 5mΩ < 1.4mΩ RDS(ON) (at VGS=4.5V) < 8mΩ < 1.8mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Non-Isolated DC/DC Converters in Telecom and Industrial DFN 5X6E D2/S1 G2 8 G1 1 PIN1 S1/D2 2 S2 D1 G1 S1/D2 D1 Q1 S2 Q2 3 7 1 G1 G2 8 G2 D2/S1 D2/S1 7 2 S1/D2 6 D2/S1 D2/S1 6 3 D1 5 D2/S1 5 4 D1 S2 D1 D1 D1 4 D1 PIN Bottom View Top View Bottom View Top View D2/S1 Orderable Part Number Package Type Form Minimum Order Quantity AOE6932 DFN 5x6E Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage TA=25°C ±12 V 55 85 L=0.01mH VDS Spike 10µs TC=25°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1. 30 IAS 60 80 A EAS 18 32 mJ V PDSM TA=70°C t ≤ 10s Steady-State Steady-State A 38 PD TA=25°C 85 340 21 VSPIKE TC=100°C 35 120 16 IDSM TA=70°C Avalanche energy Rev.2.0 : July 2016 ±20 IDM Avalanche Current C Power Dissipation A Units V ID TC=100°C Pulsed Drain Current C Power Dissipation B Max Q2 30 VGS TC=25°C Continuous Drain Current G Continuous Drain Current Max Q1 30 36 36 24 52 9.6 20 3.5 3.5 2.2 2.2 A W W TJ, TSTG -55 to 150 °C Symbol Typ Q1 Typ Q2 Max Q1 Max Q2 25 25 35 35 50 50 65 65 4 1.8 5.2 2.4 Units °C/W °C/W °C/W RθJA RθJC www.aosmd.com Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 5 1.3 VGS=10V, ID=20A ±100 nA 2.2 V 3.5 5 5 7 8 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 5.2 gFS Forward Transconductance VDS=5V, ID=20A 57 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz mΩ mΩ S 1 V 30 A 1150 pF 380 pF 55 pF 1.2 2.0 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 16 25 nC Qg(4.5V) Total Gate Charge 7.5 15 Qgs Gate Source Charge Qgd Qgs Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, ID=20A 0.6 µA 1.7 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Max nC 2.5 nC Gate Drain Charge 3.0 nC Gate Source Charge 2.5 nC 3.0 nC Body Diode Reverse Recovery Time VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 6.5 ns 4.5 ns 19 ns 3 ns 11.5 ns nC 20 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5.2°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : July 2016 www.aosmd.com Page 4 of 10 30 60 25 50 20 40 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 5 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=65°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : July 2016 www.aosmd.com Page 5 of 10 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Typ 30 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 5 1.2 VGS=10V, ID=20A ±100 nA 1.9 V 0.9 1.4 1.45 2.2 1.8 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 1.15 gFS Forward Transconductance VDS=5V, ID=20A 200 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz mΩ S 1 V 60 A 4180 pF 880 pF 125 pF 1.3 2.2 Ω 65 100 nC Qg(4.5V) Total Gate Charge 30 50 Qgs Gate Source Charge Qgd Gate Drain Charge Gate Source Charge VGS=10V, VDS=15V, ID=20A VGS=4.5V, VDS=15V, ID=20A 0.6 mΩ SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs f=1MHz µA 1.5 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Max nC 7 nC 9.5 nC 7 nC 9 ns Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 42 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω nC 9.5 8 ns 50.5 ns 8.5 ns 17 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.4°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0 : July 2016 www.aosmd.com Page 8 of 10 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 Power Dissipation (W) 50 80 Current rating ID (A) 40 30 20 10 60 40 20 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=65°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0 : July 2016 www.aosmd.com Page 9 of 10 Figure A: Gate Charge Circuit & Waveforms Gate Charge Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Resistive Switching Switching Test Test Circuit Circuit && Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped Unclamped Inductive Inductive Switching Switching (UIS) (UIS)Test TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Diode Recovery Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0 : July 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10