AOH3110

AOH3110 100V N-Channel MOSFET General Description Product Summary The AOH3110 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 1.0A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 700mΩ RDS(ON) (at VGS=4.5V) < 820mΩ SOT223 Top View D Bottom View D D G S G D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Units V ±20 V 1 ID TA=70°C Maximum 100 A 0.8 Pulsed Drain Current C IDM 4 Avalanche Current C IAS 3.5 A Avalanche energy L=50uH C TA=25°C EAS 0.3 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Jan. 2012 3.1 PD TA=70°C TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 33 60 30 www.aosmd.com °C Max 40 75 40 Units °C/W °C/W °C/W Page 1 of 5 AOH3110 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA ID(ON) On state drain current VGS=10V, VDS=5V 1 TJ=55°C ±100 nA 2.3 2.9 V 585 700 1110 1340 VGS=4.5V, ID=0.75A 635 820 Static Drain-Source On-Resistance 1.7 4 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=0.9A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.9 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units µA 5 VGS=10V, ID=0.9A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz mΩ mΩ S 1.2 V 1 A 100 pF 13 pF 5 pF 5 7.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 2.8 6 nC Qg(4.5V) Total Gate Charge 1.5 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=0.9A 2.5 0.4 nC 0.8 nC 5 ns 4 ns 12 ns 5 ns 52 ns nC VGS=10V, VDS=50V, RL=50Ω, RGEN=3Ω IF=5.6A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=5.6A, dI/dt=100A/µs 60 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using