AOH3254
150V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
150V
5A
RDS(ON) (at VGS=10V)
< 63mΩ
RDS(ON) (at VGS=4.5V)
< 77mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
SOT223
Top View
D
Bottom View
D
D
G
S
G
D
D
S
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOH3254
SOT223
Tape & Reel
2500
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
TA=25°C
Avalanche energy
L=0.3mH
VDS Spike
10µs
TA=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Rev.1.0: May 2015
Steady-State
Steady-State
A
IAS
15
A
EAS
34
mJ
VSPIKE
180
V
4.1
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
V
20
PD
TA=70°C
±20
4
IDM
Avalanche Current C
Units
V
5
ID
TA=70°C
C
Maximum
150
RθJA
RθJL
-55 to 150
Typ
25
50
10
www.aosmd.com
°C
Max
30
60
15
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
150
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.7
TJ=125°C
VGS=4.5V, ID=2A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=5A
VDS=5V, ID=5A
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
V
VDS=150V, VGS=0V
IDSS
RDS(ON)
Typ
±100
nA
2.15
2.7
V
52
63
102
123
60
77
mΩ
1
V
5
A
17
0.72
mΩ
S
675
VGS=0V, VDS=75V, f=1MHz
f=1MHz
1.4
pF
78
pF
4
pF
2.9
4.4
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11.5
20
nC
Qg(4.5V) Total Gate Charge
5.5
10
nC
VGS=10V, VDS=75V, ID=5A
Qgs
Gate Source Charge
2
nC
Qgd
Gate Drain Charge
2.5
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
3
ns
tD(off)
Turn-Off DelayTime
20
ns
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=75V, RL=15Ω,
RGEN=3Ω
5
ns
IF=5A, dI/dt=500A/µs
37
Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs
210
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2015
www.aosmd.com
Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: May 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 5
很抱歉,暂时无法提供与“AOH3254”相匹配的价格&库存,您可以联系我们找货
免费人工找货