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AOH3254

AOH3254

  • 厂商:

    AOSMD(美国万代)

  • 封装:

    TO261-4

  • 描述:

    MOSFET N-CH 150V 5A SOT223-4

  • 数据手册
  • 价格&库存
AOH3254 数据手册
AOH3254 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 150V 5A RDS(ON) (at VGS=10V) < 63mΩ RDS(ON) (at VGS=4.5V) < 77mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications SOT223 Top View D Bottom View D D G S G D D S G S Orderable Part Number Package Type Form Minimum Order Quantity AOH3254 SOT223 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25°C Avalanche energy L=0.3mH VDS Spike 10µs TA=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead Rev.1.0: May 2015 Steady-State Steady-State A IAS 15 A EAS 34 mJ VSPIKE 180 V 4.1 W 2.6 TJ, TSTG Symbol t ≤ 10s V 20 PD TA=70°C ±20 4 IDM Avalanche Current C Units V 5 ID TA=70°C C Maximum 150 RθJA RθJL -55 to 150 Typ 25 50 10 www.aosmd.com °C Max 30 60 15 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 150 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.7 TJ=125°C VGS=4.5V, ID=2A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=5A VDS=5V, ID=5A Units 1 TJ=55°C Static Drain-Source On-Resistance Max V VDS=150V, VGS=0V IDSS RDS(ON) Typ ±100 nA 2.15 2.7 V 52 63 102 123 60 77 mΩ 1 V 5 A 17 0.72 mΩ S 675 VGS=0V, VDS=75V, f=1MHz f=1MHz 1.4 pF 78 pF 4 pF 2.9 4.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11.5 20 nC Qg(4.5V) Total Gate Charge 5.5 10 nC VGS=10V, VDS=75V, ID=5A Qgs Gate Source Charge 2 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime 20 ns tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=75V, RL=15Ω, RGEN=3Ω 5 ns IF=5A, dI/dt=500A/µs 37 Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 210 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: May 2015 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: May 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5
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