AOI1R4A70

AOD1R4A70/AOI1R4A70 700V, a MOS TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 800V IDM 15A RDS(ON),max < 1.4Ω Qg,typ 7.4nC Eoss @ 400V 1mJ Applications 100% UIS Tested 100% Rg Tested • Flyback for SMPS • Charger, Adapter, lighting TO252 DPAK Top View TO-251A IPAK Top View D Bottom View D D D Bottom View D D S D S G D G S AOD1R4A70 G SG S G D AOI1R4A70 S D G S Orderable Part Number Package Type Form Minimum Order Quantity AOD1R4A70 AOI1R4A70 TO252 TO251A Tape & Reel Tube 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C Maximum 700 Units V VGS ±20 V VGS ±30 V 3.8 ID IDM 15 Avalanche Current C L=1mH A 2.4 Pulsed Drain Current C IAR 1.1 A Repetitive avalanche energy C EAR 0.6 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 2.7 100 20 48 0.4 -55 to 150 mJ W W/°C °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-Case Rev.2.0: June 2020 A,D dv/dt PD TJ, TSTG TL Symbol RqJA RqCS RqJC V/ns Typical Maximum Units 45 55 °C/W 2 0.5 2.6 °C/W °C/W www.aosmd.com Page 1 of 6 AOD1R4A70/AOI1R4A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS VSD IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current 800 ID=250μA, VGS=0V 0.59 V V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 ±100 nA 4.1 V VGS=10V, ID=1A 1.16 1.4 Ω Forward Transconductance VDS=10V, ID=1A 1.8 Diode Forward Voltage IS=1A,VGS=0V 0.8 Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance 2.9 mA 3.5 C DYNAMIC PARAMETERS Ciss Input Capacitance Co(tr) ID=250μA, VGS=0V, TJ=150°C S 1.2 V 3.8 A 15 A 354 pF 12 pF 11.2 pF 46.9 pF VGS=0V, VDS=100V, f=1MHz 1.3 pF f=1MHz 7.3 Ω 7.4 nC 2.9 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=1.9A Qgs Gate Source Charge Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 15 ns tr Turn-On Rise Time 7.5 ns tD(off) Turn-Off DelayTime 32 ns tf trr Turn-Off Fall Time 13.5 ns Body Diode Reverse Recovery Time 176 ns 11 A mC Irm Peak Reverse Recovery Current Qrr Body Diode Reverse Recovery Charge VGS=10V, VDS=400V, ID=1.9A, RG=5W IF=1.9A, di/dt=100A/ms, VDS=400V 1.4 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using