AOI21357

AOD21357/AOI21357 30V P-Channel MOSFET General Description Product Summary • Latest advanced trench technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant VDS Applications ID (at VGS=-10V) -30V -70A RDS(ON) (at VGS=-10V) < 8mΩ RDS(ON) (at VGS=-4.5V) < 13mΩ 100% UIS Tested 100% Rg Tested • Notebook AC-in load switch • Battery protection charge/discharge TO252 DPAK TopView TO-251A IPAK Bottom View Top View D Bottom View D D G D D S G G S G D S D S S G Orderable Part Number Package Type Form Minimum Order Quantity AOD21357 AOI21357 TO-252 TO-251A Tape & Reel Tube 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2018 IAS 39 A EAS 76 mJ 78 Steady-State Steady-State W 31 6.2 RqJA RqJC W 4 TJ, TSTG Symbol t ≤ 10s A -18 PDSM TA=70°C A -23 PD TA=25°C Power Dissipation A V -180 IDSM TA=70°C ±25 -50 IDM TA=25°C Units V -70 ID TC=100°C Maximum -30 -55 to 150 Typ 15 40 1.3 www.aosmd.com Max 20 50 1.6 °C Units °C/W °C/W °C/W Page 1 of 6 AOD21357/AOI21357 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=-250mA -1 TJ=55°C -5 -1.3 VGS=-10V, ID=-20A nA -1.7 -2.3 V 6 8 8.7 11.5 13 Static Drain-Source On-Resistance VGS=-4.5V, ID=-18A 9.8 gFS Forward Transconductance VDS=-5V, ID=-20A 50 VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -0.7 G DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=-15V, f=1MHz μA ±100 RDS(ON) TJ=125°C Units V VDS=-30V, VGS=0V IDSS Max mΩ mΩ S -1 V -70 A 2830 pF 430 pF 365 pF 14 28 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 50 70 nC Qg(4.5V) Total Gate Charge 25 35 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr f=1MHz VGS=-10V, VDS=-15V, ID=-20A 9 nC 12 nC 12.5 ns 18 ns 125 ns 66 ns IF=-20A, di/dt=500A/ms 32 Body Diode Reverse Recovery Charge IF=-20A, di/dt=500A/ms 62 ns nC VGS=-10V, VDS=-15V, RL=0.75W, RGEN=3W A. The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to -4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC RqJC=1.6°C/W 1 Single Pulse 0.1 PDM Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2018 www.aosmd.com Page 4 of 6 AOD21357/AOI21357 80 80 60 60 Current rating -ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 0 40 20 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=50°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2018 www.aosmd.com Page 5 of 6 AOD21357/AOI21357 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + + DUT Qgd Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs VDC td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: November 2018 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6