AOI2610E

AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60V 46A < 9.5mΩ < 13.3mΩ Typical ESD protection HBM Class 2 Applications 100% UIS Tested 100% Rg Tested • High efficiency power supply • Secondary synchronus rectifier TO251A (IPAK) TO252 (DPAK) TopView Bottom View Top View TO251B (IPAK short lead) Bottom View D D D D Bottom View Top View G D D S G G D S G AOD2610E S S D G G AOI2610E Orderable Part Number AOD2610E AOI2610E AOY2610E D S S D G S AOY2610E Package Type TO-252 TO-251A TO-251B Form Tape & Reel Tube Tube Minimum Order Quantity 2500 3500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain TC=100°C Current G Pulsed Drain Current Continuous Drain Current Symbol VDS VGS ID C IDM TA=25°C TA=70°C Power Dissipation B IAS L=0.3mH 10μs TC=25°C TC=100°C TA=25°C TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case EAS VSPIKE PD Power Dissipation A Junction and Storage Temperature Range Rev.2.1: February 2022 110 19 15 IDSM Avalanche Current C Avalanche energy VDS Spike I Maximum 60 ±20 46 36.5 PDSM TJ, TSTG Symbol A t ≤ 10s AD Steady-State Steady-State RqJA RqJC Typ 15 40 1.7 www.aosmd.com Units V V A A 17 A 43 72 59.5 23.5 6.2 4.0 -55 to 150 mJ V Max 20 50 2.1 W W °C Units °C/W °C/W °C/W Page 1 of 6 AOD2610E/AOI2610E/AOY2610E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ Max 60 TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A 1.4 TJ=125°C VGS=0V, VDS=30V, f=1MHz f=1MHz VGS=10V, VDS=30V, ID=20A VGS=10V, VDS=30V, RL=1.5W, RGEN=3W IF=20A, di/dt=500A/ms IF=20A, di/dt=500A/ms 0.6 Units V VDS=60V, VGS=0V IDSS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Min 1.8 7.7 12.5 10.3 52 0.72 1100 300 28 1.2 14.5 7 2.5 3.5 6.5 3.5 22 3 19 65 1 5 ±10 2.4 9.5 15.5 13.3 μA μA V mΩ 1 46 mΩ S V A 2.0 pF pF pF Ω 25 13 nC nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using