AOI294A

AOD294A/AOI294A 100V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • Pb-Free lead Plating, RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 100V 55A RDS(ON) (at VGS=10V) < 12mΩ RDS(ON) (at VGS=4.5V) < 15.5mΩ 100% UIS Tested 100% Rg Tested • High Frequency Switching and Synchronous Recfification TO-251A IPAK TO-252 DPAK Top View Top View Bottom View D Bottom View D D G S S G G AOD294A D S S D G G S AOI294A Orderable Part Number Package Type Form Minimum Order Quantity AOD294A AOI294A TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C TA=25°C Continuous Drain Avalanche energy VDS Spike I Power Dissipation B L=0.1mH C 10μs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.3.0: August 2020 IAS 25 A EAS 31 mJ VSPIKE 120 V AD 73 t ≤ 10s Steady-State Steady-State RqJA RqJC W 30 6.2 W 4.0 TJ, TSTG Symbol A A 13 PDSM TA=70°C A 16 PD TC=100°C V 138 IDSM Avalanche Current C ±20 35 IDM TA=70°C Current Units V 55 ID TC=100°C Maximum 100 -55 to 150 Typ 15 40 1.35 www.aosmd.com Max 20 50 1.7 °C Units °C/W °C/W °C/W Page 1 of 6 AOD294A/AOI294A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 1.5 ±100 nA 2.0 2.5 V 10 12 18 22 15.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 12 gFS Forward Transconductance VDS=5V, ID=20A 67 VSD Diode Forward Voltage IS=1A, VGS=0V 0.71 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance μA 5 VGS=10V, ID=20A Coss Units V VDS=100V, VGS=0V IDSS Max VGS=0V, VDS=50V, f=1MHz mΩ mΩ S 1 V 55 A 2305 pF 180 pF 11.5 pF 0.5 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 32.5 50 nC Qg(4.5V) Total Gate Charge 15.5 25 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=50V, ID=20A 0.2 6.5 nC Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 3 ns 27 ns 4 ns IF=20A, di/dt=500A/ms 29.5 Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 160 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=1.7°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.3.0: August 2020 www.aosmd.com Page 4 of 6 AOD294A/AOI294A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 50 Current rating I D (A) Power Dissipation (W) 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZqJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=50°C/W 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: August 2020 www.aosmd.com Page 5 of 6 AOD294A/AOI294A Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.3.0: August 2020 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6