AOI2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 4.7Ω Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom Top View TO-251 IPAK TO251A IPAK TO252 DPAK Bottom View Bottom View Top View D Bottom View Top View D D G S G AOD2N60A S G D S S D G S D G AOU2N60A AOI2N60A S D G G S Orderable Part Number Package Type Form Minimum Order Quantity AOD2N60A AOI2N60A AOU2N60A TO-252 TO-251A TO-251 Tape & Reel Tube Tube 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Maximum 600 Units V ±30 V 2 ID 1.4 A IDM 6 Avalanche Current C,I IAR 4.6 A Repetitive avalanche energy C,I EAR 10.6 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 97 5 57 mJ V/ns W 0.45 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G PD TJ, TSTG TL Maximum Case-to-sink A Symbol RθJA RθCS Maximum Junction-to-CaseD,F RθJC Rev.2.0: May 2014 Typical 40 Maximum 50 Units °C/W 1.8 0.5 2.2 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.7 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.4 µA 4 4.5 nΑ V 4.7 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 3.9 gFS Forward Transconductance VDS=40V, ID=1A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 S IS Maximum Body-Diode Continuous Current 2 A ISM Maximum Body-Diode Pulsed Current C 6 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 295 VGS=0V, VDS=25V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge pF 2.3 pF 3.2 Ω 6.5 VGS=10V, VDS=480V, ID=2A pF 30 11 nC Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 1.8 nC tD(on) Turn-On DelayTime 16 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=300V, ID=2A, RG=25Ω 28 ns 14 ns IF=2A,dI/dt=100A/µs,VDS=100V 268 Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 1.6 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using