AOI409

AOD409/AOI409 60V P-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications VDS Applications ID (at VGS=-10V) -60V -26A RDS(ON) (at VGS=-10V) < 40mΩ RDS(ON) (at VGS=-4.5V) < 55mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO252 DPAK TopView Bottom View TO-251A IPAK Bottom View Top View D D D G D D S G G S G D S S S D G Orderable Part Number Package Type Form Minimum Order Quantity AOD409 AOI409 TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current VGS TC=25°C Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.7.0: March 2018 AD t ≤ 10s Steady-State Steady-State A -18 IAS -26 A EAS 34 mJ 60 W 30 2.5 W 1.6 TJ, TSTG Symbol A V -80 PDSM TA=70°C ±20 IDM PD TA=25°C Power Dissipation A Units V -26 ID TC=100°C C Maximum -60 RqJA RqJC -55 to 175 Typ 16.7 40 1.9 www.aosmd.com °C Max 25 50 2.5 Units °C/W °C/W °C/W Page 1 of 6 AOD409/AOI409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250μA, VGS=0V -60 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 TJ=55°C VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A gFS Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA -1.9 -2.4 V 32 40 A 53 43 55 32 V -30 A 3600 pF pF pF 2 2.4 Ω 44 54 nC 22.2 28 nC Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-20A, dI/dt=100A/ms 40 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/ms 59 VGS=-10V, VDS=-30V, RL=1.5W, RGEN=3W mΩ -1 241 Qg(4.5V) VGS=-10V, VDS=-30V, ID=-20A mΩ S -0.73 153 f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Body Diode Reverse Recovery Time μA -5 2977 VGS=0V, VDS=-30V, f=1MHz Units V -1 Zero Gate Voltage Drain Current Coss Max VDS=-48V, VGS=0V IDSS RDS(ON) Typ 9 nC 10 nC 12 ns 14.5 ns 38 ns 15 ns 50 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=2.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.7.0: March 2018 www.aosmd.com Page 4 of 6 AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS tA  L  ID BV  VDD 80 25 Power Dissipation (W) -ID(A), Peak Avalanche Current 30 20 15 TA=25°C 10 0.00001 60 40 20 0 0.0001 0 0.001 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 60 25 50 20 40 Power (W) Current rating -ID(A) TA=25°C 15 30 10 20 5 10 0 0 25 50 75 100 125 150 175 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZqJA Normalized Transient Thermal Resistance 0.01 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.7.0: March 2018 www.aosmd.com Page 5 of 6 AOD409/AOI409 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.7.0: March 2018 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6