AOI4184

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current load applications. VDS 40V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS=4.5V) < 11mΩ 100% UIS Tested 100% Rg Tested TO-251A IPAK TO252 DPAK TopView D Bottom View Top View Bottom View D D G D S G D S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C Units V ±20 V A 120 12 IDSM TA=70°C Maximum 40 40 IDM TA=25°C D 50 ID TC=100°C S G D A 9.5 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 61 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.2. 0: July 2013 2.3 Steady-State Steady-State RθJA RθJC W 1.5 -55 to 175 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 PD TC=100°C Typ 18 44 2.4 www.aosmd.com °C Max 22 55 3 Units °C/W °C/W °C/W Page 1 of 6 AOD4184/AOI4184 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 40 1 TJ=55°C µA 5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 120 Units V VDS=40V, VGS=0V IGSS ±100 nA 2.2 2.6 V 6.7 8 11 13 VGS=4.5V, ID=15A 8.5 11 mΩ 37 1 V 20 A VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss A 0.72 mΩ S 1200 1500 1800 pF 150 215 280 pF 80 135 190 pF 2 3.5 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 21 27.2 33 nC Qg(4.5V) Total Gate Charge 10 13.6 16 Qgs Gate Source Charge Qgd Gate Drain Charge Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A nC 6.4 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 20 29 38 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 18 26 34 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω nC 4.5 6.4 ns 17.2 ns 29.6 ns 16.8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using