AOI423

AOD423/AOI423/AOY423 30V P-Channel AlphaSGT TM General Description Product Summary The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. VDS ID (at VGS= -20V) RDS(ON) (at VGS= -20V) RDS(ON) (at VGS = -10V) -30V -70A < 6.2mW (< 6.7mW*) < 8mW (< 8.5mW*) 100% UIS Tested 100% Rg Tested TO252 (DPAK) TopView TO251A (IPAK) Bottom View Top View Bottom View D S G G D S G S AOD423 S D Bottom View Top View D D D TO251B (IPAK short lead) D D G G D S S D GG S AOY423 AOI423 Orderable Part Number Package Type Form Minimum Order Quantity AOD423 AOI423 AOY423 TO-252 TO-251A TO-251B Tape & Reel Tube Tube 2500 3500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain ID TC=100°C Current G Pulsed Drain Current C TA=25°C Continuous Drain TA=70°C Current Avalanche Current Maximum -30 ±25 -70 -67 IDM IAS, IAR C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C EAS, EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case PD PDSM Symbol A t ≤ 10s AD Steady-State Steady-State A -200 -15 -12 IDSM C Units V V RqJA RqJC Typ 16 41 0.9 A -50 A 125 90 45 2.5 1.6 -55 to 175 mJ W W °C Max 20 50 1.6 Units °C/W °C/W °C/W * package TO251A, TO251B Rev.1.1: February 2022 www.aosmd.com Page 1 of 6 AOD423/AOI423/AOY423 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage On state drain current ID(ON) RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Conditions Min ID=-250mA, VGS=0V -30 TO252 VGS=-10V, ID=-20A TO252 -1.5 -200 TJ=125°C VGS=-20V, ID=-20A TO251A, TO251B VGS=-10V, ID=-20A TO251A, TO251B SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge -2.5 5.1 7.6 6.2 9.2 mW 6.2 8 mW 5.6 6.7 mW 6.7 8.5 mW -1 -70 S V A 6.0 pF pF pF W 42 -0.7 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A VGS=-10V, VDS=-15V, RL=0.75W, RGEN=3W IF=-20A, dI/dt=500A/ms IF=-20A, dI/dt=500A/ms 1.5 Units -1 -5 ±100 -3.5 TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=-250mA VGS=-10V, VDS=-5V VGS=-20V, ID=-20A Max V VDS=-30V, VGS=0V VDS=-5V, ID=-20A Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ 2760 550 375 3 45 10 12 13 23 35 26 15 30 65 mA nA V A nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using