AOI442

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS 60V 37A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 20mΩ RDS(ON) (at VGS = 4.5V) < 25mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View Bottom View Top View TO-251A IPAK D Bottom View D D D S G G S D S G TC=25°C S Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0 : Aug 2009 Steady-State Steady-State A IAS, IAR 30 A EAS, EAR 45 mJ 60 W 30 2.1 RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s A 7 PDSM TA=70°C V 5 PD TC=100°C ±20 60 IDSM TA=70°C Units V 26 IDM TA=25°C Continuous Drain Current Maximum 60 37 ID TC=100°C D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G S G -55 to 175 Typ 17.4 51 1.8 °C Max 25 60 2.5 Units °C/W °C/W °C/W Page 1 of 6 AOD442/AOI442 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V VDS=48V, VGS=0V Zero Gate Voltage Drain Current 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.6 VGS=10V, VDS=5V 60 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=30V, ID=20A 2.1 µA 100 nA 2.7 V A 16 20 31 37 20 25 mΩ 1 V 32 A 65 0.7 mΩ S 1535 1920 2300 pF 108 155 200 pF 70 116 165 pF 0.3 0.65 0.8 Ω 38 47.6 68 nC 20 24.2 30 nC 4.8 6 7 nC 8.5 14.4 20 nC 7.4 VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω Units V 1 TJ=55°C gFS Max 60 VGS(th) ID(ON) IS Typ ns 5.1 ns 28.2 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 46 5.5 ns 41 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using