AOI4T60P

AOD4T60P/AOI4T60P 600V,4A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 16A RDS(ON),max < 2.1Ω Qg,typ 8.3nC Eoss @ 400V 1.6µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-252 DPAK Top View TO-251A IPAK Top View Bottom View D Bottom View D D G S S G D G S S D G G S AOI4T60P AOD4T60P Orderable Part Number Package Type Form Minimum Order Quantity AOD4T60P AOI4T60P TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Maximum 600 Units V ±30 V 4 ID A 2.4 IDM 16 IAR 4 A Repetitive avalanche energy C EAR 8 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 203 50 5 83 0.7 -55 to 150 mJ W W/°C °C 300 °C dv/dt PD TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F RθJC Rev.1.0: May 2014 V/ns Typical Maximum Units 40 50 °C/W 1.25 0.5 1.5 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V 0.55 VDS=600V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=2A gFS Forward Transconductance VDS=40V, ID=2A 3.2 VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 IS ISM ±100 nA 5 V 1.75 2.1 Ω 1 V Maximum Body-Diode Continuous Current 4 A Maximum Body-Diode Pulsed Current C 16 A Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz Gate Source Charge Qgd S 522 pF 22 pF 20 pF 32 pF 2 pF 2.9 Ω VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 4.2 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=480V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 8.3 VGS=10V, VDS=480V, ID=4A 15 nC 3.4 nC Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 19 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=300V, ID=4A, RG=25Ω 25 ns tf trr Turn-Off Fall Time 11 ns IF=4A,dI/dt=100A/µs,VDS=100V 309 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 2.7 ns µC Body Diode Reverse Recovery Time A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using