AOI600A60

AOD600A60/AOI600A60 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 32A RDS(ON),max < 0.6Ω Qg,typ 11.5nC Eoss @ 400V 1.8mJ Applications 100% UIS Tested 100% Rg Tested • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Server power TO252 DPAK Top View TO-251A IPAK Bottom View D Bottom View Top View D D D D D D S G G G S G AOD600A60 S G D AOI600A60 S D G S Orderable Part Number Package Type Form Minimum Order Quantity AOD600A60 AOI600A60 TO252 TO251A Tape & Reel Tube 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Maximum 600 Units V Gate-Source Voltage VGS ±20 V Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain VGS ±30 V TC=100°C Current Pulsed Drain Current Avalanche Current C C L=1mH 8 ID A 5 IDM 32 IAR 1.6 A Repetitive avalanche energy C EAR 1.3 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C EAS 19 100 20 96 0.8 mJ W W/°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG -55 to 150 °C 300 °C dv/dt PD TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RqJA Maximum Case-to-sink A RqCS Maximum Junction-to-CaseD,F RqJC Rev.2.0: September 2020 V/ns Typical Maximum Units 45 55 °C/W 1 0.5 1.3 °C/W °C/W www.aosmd.com Page 1 of 6 AOD600A60/AOI600A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA 3.5 RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS=10V, ID=2.1A 0.53 gFS Forward Transconductance VDS=10V, ID=2.1A 4.2 VSD Diode Forward Voltage IS=2.1A,VGS=0V 0.8 IS ISM 700 ID=250μA, VGS=0V 0.59 V o V/ C VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 mA nA V 0.6 Ω S 1.2 V Maximum Body-Diode Continuous Current 8 A Maximum Body-Diode Pulsed Current C 32 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy I related Crss Effective output capacitance, time J related Reverse Transfer Capacitance Rg Gate resistance Co(tr) ID=250μA, VGS=0V, TJ=150°C 608 pF 19 pF 21 pF 76 pF VGS=0V, VDS=100V, f=1MHz 1.3 pF f=1MHz 4.6 Ω 11.5 nC 4.2 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=2.1A Qgs Gate Source Charge Qgd Gate Drain Charge 2.8 nC Td(on) Turn-On DelayTime 18 ns Tr Turn-On Rise Time 5.5 ns Td(off) Turn-Off DelayTime 36 ns Tf Trr Turn-Off Fall Time 16 ns 159 ns Irm Peak Reverse Recovery Current 13 Qrr Body Diode Reverse Recovery Charge A mC VGS=10V, VDS=400V, ID=2.1A, RG=5W Body Diode Reverse Recovery Time IF=2.1A, dI/dt=100A/ms, VDS=400V 1.2 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using