AOI7N65

AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View VDS 750V@150℃ ID (at VGS=10V) 7A RDS(ON) (at VGS=10V) < 1.56Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Top View Bottom View D Bottom View D D G S G S G S D S G D S G AOD7N65 AOI7N65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Maximum 650 Units V ±30 V 7 ID 4.3 A IDM 23 Avalanche Current C IAR 3.1 A Repetitive avalanche energy C EAR 144 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 288 5 178 mJ V/ns W 1.4 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.1.0: October 2014 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 0.5 0.5 0.7 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD7N65/AOI7N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 750 V ID=250µA, VGS=0V 0.67 V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.3 µA 3.9 4.5 nΑ V 1.56 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A 1.2 gFS Forward Transconductance VDS=40V, ID=3.5A 7 VSD Diode Forward Voltage IS=1A,VGS=0V S 0.72 IS Maximum Body-Diode Continuous Current 7 A ISM Maximum Body-Diode Pulsed Current 23 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 780 982 1180 pF VGS=0V, VDS=25V, f=1MHz 60 86 115 pF 4 7 10 pF VGS=0V, VDS=0V, f=1MHz 1.5 3.2 5 Ω 15 19.6 24 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=520V, ID=7A Qgs Gate Source Charge 4.6 nC Qgd Gate Drain Charge 8.2 nC tD(on) Turn-On DelayTime 26 ns tr Turn-On Rise Time 43 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V 290 365 440 Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V 3.4 4.3 5.4 VGS=10V, VDS=325V, ID=7A, RG=25Ω 53 ns 32 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using