AOI8N25

AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 300V@150℃ ID (at VGS=10V) 8A RDS(ON) (at VGS=10V) < 0.56Ω 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View TO251A IPAK Top View Bottom View D Bottom View D D G S G S G G S D S D S G AOD8N25 AOI8N25 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB VGS TC=25°C TC=100°C Maximum 250 Units V ±30 V 8 ID 5 A Pulsed Drain Current C IDM Avalanche Current C IAS 2.1 A Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 132 5 78 mJ V/ns W 0.63 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev 1: Feb 2012 16 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 1.3 0.5 1.6 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD8N25/AOI8N25 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 250 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 300 V ID=250µA, VGS=0V 0.25 V/ oC VDS=250V, VGS=0V 1 VDS=200V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.1 µA 3.7 4.3 nΑ V 0.56 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1.5A 0.46 gFS Forward Transconductance VDS=40V, ID=1.5A 5 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 8 A ISM Maximum Body-Diode Pulsed Current 16 A 0.77 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance S 306 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=200V, ID=1.5A 1.7 pF 51 pF 3.2 pF 3.4 5.1 Ω 6.0 7.2 nC Qgs Gate Source Charge 2.0 nC Qgd Gate Drain Charge 1.5 nC tD(on) Turn-On DelayTime 14 ns tr Turn-On Rise Time 12 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=1.5A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time VGS=10V, VDS=125V, ID=1.5A, RG=25Ω IF=1.5A,dI/dt=100A/µs,VDS=100V 23 ns 12 ns 77 ns µC 0.29 A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using