AOK20N60L

AOK20N60L 600V,20A N-Channel MOSFET General Description Product Summary The AOK20N60L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 20A RDS(ON) (at VGS=10V) < 0.37Ω 100% UIS Tested 100% Rg Tested Top View D TO-247 G S G S D AOK20N60L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK20N60L 600 Units V ±30 V 20 12 A Pulsed Drain Current C IDM Avalanche Current C IAR 6.5 A Repetitive avalanche energy C EAR 630 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 1260 5 417 mJ V/ns W 3.3 -55 to 150 W/ oC °C 300 °C AOK20N60L 40 0.5 0.3 Units °C/W °C/W °C/W Rev1.0: Sepetember 2017 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com 80 Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.8 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A gFS Forward Transconductance VDS=40V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.8 4.5 nΑ V 0.29 0.37 Ω 1 V Maximum Body-Diode Continuous Current 20 A Maximum Body-Diode Pulsed Current 80 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge S 2448 3061 3680 pF 190 273 360 pF 13 22.8 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 48 61 74 nC 14 18 22 nC 12 24 36 nC VGS=10V, VDS=480V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 25 0.69 VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3.2 57 VGS=10V, VDS=300V, ID=20A, RG=25Ω ns 125 ns 128 ns 88 IF=20A,dI/dt=100A/µs,VDS=100V ns 384 480 580 8 10.5 13 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using