AOK22N50L

AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 22A RDS(ON) (at VGS=10V) < 0.26Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK22N50L Top View D TO-247 G S G S D AOK22N50 Orderable Part Number Package Type AOK22N50L TO-247 Green Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Avalanche Current C Minimum Order Quantity Tube 240 AOK22N50 500 Units V ±30 V 22 ID 15 IDM C Form A 88 IAR 7 A EAR 735 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B o Power Dissipation Derate above 25 C EAS dv/dt 1470 5 417 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-Case TJ, TSTG 3.3 -55 to 150 W/ oC °C 300 °C AOK22N50 40 0.5 0.3 Units °C/W °C/W °C/W Repetitive avalanche energy Rev1: April 2014 C PD TL Symbol RθJA RθCS RθJC www.aosmd.com Page 1 of 5 AOK22N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.57 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A gFS Forward Transconductance VDS=40V, ID=11A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS ISM ±100 µA 4 4.5 nΑ V 0.21 0.26 Ω 1 V Maximum Body-Diode Continuous Current 22 A Maximum Body-Diode Pulsed Current 88 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge S 2465 3086 3710 pF VGS=0V, VDS=25V, f=1MHz 200 290 380 pF 14 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 55 69 83 nC 17 22 27 nC 12 24 36 nC SWITCHING PARAMETERS Total Gate Charge Qg Qgs 3.4 VGS=10V, VDS=400V, ID=22A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=22A,dI/dt=100A/µs,VDS=100V 415 524 630 Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V 7.5 9.6 12 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=22A, RG=25Ω 60 ns 122 ns 124 ns 77 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using