AOK2500L

AOK2500L 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 150V 180A RDS(ON) (at VGS=10V) < 6.2mΩ RDS(ON) (at VGS=6V) < 7.3mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications Top View D TO-247 G S S D G Orderable Part Number Package Type Form Minimum Order Quantity AOK2500L TO-247 Tube 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.3mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1. 0: September 2014 IAS 65 A EAS 634 mJ VSPIKE 180 V 500 Steady-State Steady-State W 250 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s A 11 PDSM Junction and Storage Temperature Range A 14 PD TA=25°C V 440 IDSM TA=70°C ±20 127 IDM TA=25°C Continuous Drain Current Units V 180 ID TC=100°C C Maximum 150 RθJA RθJC -55 to 175 Typ 5 30 0.22 www.aosmd.com °C Max 8 40 0.3 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 150 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 2.3 ±100 nA 2.8 3.5 V 5.1 6.2 9.7 11.8 7.3 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 5.6 gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 0.66 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=75V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qgs Gate Source Charge Qgd VGS=10V, VDS=75V, ID=20A µA 5 VGS=10V, ID=20A Coss Units V VDS=150V, VGS=0V IDSS Max 1.0 mΩ mΩ S 1 V 180 A 6460 pF 586 pF 22 pF 2.1 3.2 Ω 97 136 nC 22.5 nC Gate Drain Charge 17 nC tD(on) Turn-On DelayTime 18.5 ns tr Turn-On Rise Time 20 ns VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 67.5 ns 14 ns 90 ns nC 1090 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1. 0: September 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 200 500 Power Dissipation (W) 150 Current rating ID(A) 400 300 200 100 50 100 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 0.01 PD 0.001 Single Pulse 0.0001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1. 0: September 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1. 0: September 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6