AOK30B120D2

AOK30B120D2 1200V, 30A Alpha IGBT TM with Diode General Description Product Summary • Latest AlphaIGBT ( IGBT) technology • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance VCE IC (TC=100°C) 1200V 30A VCE(sat) (TC=25°C) 1.77V Applications • Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications Top View C TO-247 G AOK30B120D2 C E E G Orderable Part Number Package Type AOK30B120D2 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE V GE Gate-Emitter Voltage T =25° C C Continuous Collector IC TC=100°C Current Form Minimum Order Quantity Tube 240 AOK30B120D2 1200 Units V ±30 60 V 30 A Pulsed Collector Current, Limited by T Jmax I Cpulse 120 A Non repetitive peak collector currentA Turn off SOA, VCE ≤ 600V, Limited by T Jmax I CSM 200 A I LM 120 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by T Jmax TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case 60 IF 30 I Fpulse PD T J , T STG TL Symbol R q JA R q JC R q JC 120 340 170 A A W -55 to 175 °C 300 °C AOK30B120D2 40 0.44 Units °C/W °C/W 1.20 °C/W Note A: Capacitor charging saturation current limited by T jmax