AOK30B60D1

AOK30B60D1 600V, 30A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations.The soft copackaged diode is targeted for minimal losses in Welding machines, Solar Inverter and UPS applications. VCE IC (TC=100°C) 600V 30A VCE(sat) (TC=25°C) 1.85V Top View C TO-247 G C AOK30B60D1 E E G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE AOK30B60D1 600 Units V Gate-Emitter Voltage V GE ±20 V VGE Spike VSPIKE 24 V 500ns T Continuous Collector C=25°C TC=100°C Current 60 IC 30 Pulsed Collector Current, Limited by TJmax I CM Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax 96 A 96 A 30 IF A 15 A I FM 96 A Short circuit withstanding time VGE = 15V, VCE ≤ t SC 400V, Delay between short circuits ≥ 1.0s, TC=25°C 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.3.0: Nov 2013 PD T J , T STG TL Symbol R θ JA R θ JC R θ JC www.aosmd.com 208 83 W -55 to 150 °C 300 °C AOK30B60D1 40 0.6 Units °C/W °C/W 1.7 °C/W Page 1 of 9 AOK30B60D1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=26A Collector-Emitter Saturation Voltage VGE=0V, IC=15A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Max Units V 600 - - TJ=25°C - 1.85 2.4 TJ=125°C - 2.2 - TJ=150°C - 2.3 - TJ=25°C - 1.47 2 TJ=125°C - 1.44 - TJ=150°C - 1.42 - - 5.6 - TJ=25°C - - 10 TJ=125°C - - 400 TJ=150°C - - 2000 VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=30A - 13 - S - 1324 - pF - 153 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 5 - pF Qg Total Gate Charge - 34 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=30A - 14.3 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=25Ω I C(SC) short circuits ≥ 1.0s Rg Gate resistance f=1MHz SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) - 10.7 - nC - 96 - A - 1.3 - Ω t D(on) Turn-On DelayTime - 20 - ns tr Turn-On Rise Time - 44 - ns t D(off) Turn-Off Delay Time - 58 - ns tf Turn-Off Fall Time - 16 - ns Q gc TJ=25°C VGE=15V, VCE=400V, IC=30A, RG=10Ω, Parasitic Ιnductance=150nH E on Turn-On Energy - 1.1 - mJ E off Turn-Off Energy - 0.24 - mJ E total t rr Total Switching Energy - 1.34 - mJ Diode Reverse Recovery Time - 120 - Q rr Diode Reverse Recovery Charge - 0.5 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) - 7 - A t D(on) Turn-On DelayTime - 21 - ns tr Turn-On Rise Time - 45 - ns t D(off) Turn-Off Delay Time - 70 - ns tf Turn-Off Fall Time - 19 - ns E on Turn-On Energy - 1.3 - mJ E off Turn-Off Energy - 0.46 - mJ E total t rr Total Switching Energy - 1.76 - mJ Diode Reverse Recovery Time - 206 - Q rr Diode Reverse Recovery Charge - 0.9 - ns µC I rm Diode Peak Reverse Recovery Current - 9 - A TJ=25°C IF=15A,dI/dt=200A/µs,VCE=400V I rm TJ=150°C VGE=15V, VCE=400V, IC=30A, RG=10Ω, Parasitic Inductance=150nH TJ=150°C IF=15A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: Nov 2013 www.aosmd.com Page 2 of 9 AOK30B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 120 20V 20V 17V 100 17V 120 15V IC (A) IC (A) 80 15V 80 13V 60 13V 11V 40 11V 40 9V VGE= 7V 20 9V VGE=7V 0 0 0 1 2 3 4 5 6 7 0 1 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 50 100 VCE=20V -40°C -40°C 40 80 150°C 60 30 IF (A) IC (A) 25°C 40 20 20 10 25°C 150°C 0 0 4 7 10 13 0.0 16 VGE(V) Fig 3: Transfer Characteristic 1.0 1.5 2.0 2.5 3.0 VF (V) Fig 4: Diode Characteristic 8 6 5 7 IC=60A 3 VGE(TH)(V) 4 VCE(sat) (V) 0.5 IC=26A 2 6 5 4 1 IC=15A 3 0 2 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.3.0: Nov 2013 www.aosmd.com 0 30 60 90 TJ (°C) Figure 6: VGE(TH) vs. Tj 120 150 Page 3 of 9 AOK30B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VCE=480V IC=30A Cies 1000 Capacitance (pF) VGE (V) 12 9 6 3 Coes 100 Cres 10 1 0 0 5 10 15 20 25 30 0 35 5 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic Qg(nC) Fig 7: Gate-Charge Characteristics 250 Power Disspation (W) 200 150 100 50 0 25 50 75 100 125 150 TCASE(°C) Fig 10: Power Disspation as a Function of Case 60 50 Current rating IC(A) 40 30 20 10 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Current De-rating Rev.3.0: Nov 2013 www.aosmd.com Page 4 of 9 AOK30B60D1 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10,000 Td(off) Td(off) Tf Tf 100 Switching Time (nS) Switching Time (nS) Td(on) Tr 10 Td(on) 1,000 Tr 100 10 1 1 0 10 20 30 40 50 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω Ω) 60 70 0 30 60 90 Rg (Ω Ω) Figure 13: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=30A) 120 1000 Td(off) Tf Switching Time (nS) Td(on) 100 Tr 10 1 0 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=30A,Rg=10Ω Ω) Rev.3.0: Nov 2013 200 www.aosmd.com Page 5 of 9 AOK30B60D1 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 3.0 Eoff Eoff 6 Eon 2.5 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eon 4 2 Etotal 2.0 1.5 1.0 0.5 0 0.0 0 10 20 30 40 50 60 IC (A) Figure 15: Switching Loss vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=10Ω Ω) 70 0 2.5 30 60 90 Rg (Ω Ω) Figure 16: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=30A) 2.5 Eoff Eoff Eon 2 Eon 2.0 Switching Energ y (mJ) Etotal Switching Energy (mJ) 120 1.5 1 0.5 0 Etotal 1.5 1.0 0.5 0.0 0 25 75 100 125 150 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=30A,Rg=10Ω Ω) Rev.3.0: Nov 2013 50 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=30A,Rg=10Ω Ω) 500 Page 6 of 9 AOK30B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2.5 1.E-04 2.1 30A VSD (V) ICE(S) (A) VCE=600V 1.E-05 1.E-06 1.7 15A 1.3 5A VCE=400V 1.E-07 0.5 0 25 50 75 100 125 150 175 200 0 50 75 100 125 150 Temperature (°C ) Fig 20: Diode Forward voltage vs. Junction Temperature Temperature (°C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature Qrr (nC) 1000 Qrr 14 60 300 12 50 250 800 40 600 30 25°C 400 Trr 200 150 8 6 25°C 150°C 100 20 4 S 150°C 200 10 150°C S 150°C 175 350 Trr (nS) 1200 25 70 Irm(A) 1400 Irm 25°C 50 10 2 25°C 0 0 1400 5 10 15 20 25 30 35 IS (A) Fig 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 20 250 70 1200 0 0 5 10 15 20 25 30 35 0 IF(A) Fig 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 60 200 150°C 600 40 30 25°C Irm 25°C 0 150 200 Trr 150°C 50 10 0 S 25°C 25°C 0 300 350 400 450 di/dt (A/µ µS) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=15A) Rev.3.0: Nov 2013 8 100 20 150°C 200 12 150 4 S 400 Trr (nS) Qrr 800 16 150°C 50 Irm(A) 1000 Qrr (nC) IF=1A 0.9 1.E-08 0 13V 250 www.aosmd.com 150 200 0 250 300 350 400 450 di/dt (A/µ µS) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=15A) Page 7 of 9 AOK30B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.7°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.3.0: Nov 2013 www.aosmd.com Page 8 of 9 AOK30B60D1 Rev.3.0: Nov 2013 www.aosmd.com Page 9 of 9