AOK40B120M1

AOK40B120M1 TM 1200V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 1200V breakdown voltage • Fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • High switching speed • Low turn-off switching loss and softness • Very good EMI behavior VCE IC (TC=100°C) 1200V 40A VCE(sat) (TJ=25°C) 1.95V Applications • Welding Machines • UPS & Solar Inverters • Very High Switching Frequency Applications Top View C TO-247 G G AOK40B120M1 Orderable Part Number C E Package Type AOK40B120M1 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Collector-Emitter Voltage Symbol V CE Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax Turn off SOA, VCE ≤ 650V, Limited by TJmax Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.1.0: May 2015 IC E Form Minimum Order Quantity Tube 240 AOK40B120M1 1200 Units V ±30 V 80 40 A I CM 120 A I LM 120 A IF I FM PD T J , T STG TL Symbol R θ JA R θ JC R θ JC www.aosmd.com 80 40 120 600 300 A A W -55 to 175 °C 300 °C AOK40B120M1 40 0.25 Units °C/W °C/W 0.4 °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=40A Collector-Emitter Saturation Voltage VF Diode Forward Voltage VGE=0V, IC=40A V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES I GES g FS Min VCE=1200V, VGE=0V Zero Gate Voltage Collector Current Gate-Emitter leakage current Forward Transconductance Output Capacitance C res Reverse Transfer Capacitance Qg Total Gate Charge Q ge Gate to Emitter Charge Q gc Gate to Collector Charge Max Units V 1200 - - TJ=25°C - 1.95 2.45 TJ=125°C - 2.35 - TJ=175°C - 2.55 - TJ=25°C - 2.5 3.15 TJ=125°C - 2.75 - TJ=175°C - 2.55 - - 5.8 - TJ=25°C - - 0.1 TJ=125°C - - 4 TJ=175°C - - 20 V V V mA VCE=0V, VGE=±30V - - ±100 nA VCE=20V, IC=40A - 28 - S - 4770 - pF - 270 - pF - 85 - pF - 140 - nC - 62 - nC - 48 - nC - 15 - Ω ns DYNAMIC PARAMETERS C ies Input Capacitance C oes Typ VGE=0V, VCC=25V, f=1MHz VGE=15V, VCC=960V, IC=40A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(on) Turn-On DelayTime - 90 - tr Turn-On Rise Time - 85 - ns t D(off) Turn-Off Delay Time - 226 - ns tf Turn-Off Fall Time - 46 - ns E on Turn-On Energy - 3.87 - mJ E off Turn-Off Energy - 1.25 - mJ E total t rr Total Switching Energy - 5.12 - mJ Diode Reverse Recovery Time - 340 - Q rr Diode Reverse Recovery Charge - 1.5 - ns µC I rm Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 9.3 - A t D(on) Turn-On DelayTime - 86 - ns tr Turn-On Rise Time - 92 - ns t D(off) Turn-Off Delay Time - 287 - ns tf Turn-Off Fall Time - 144 - ns E on Turn-On Energy - 4.48 - mJ E off Turn-Off Energy - 2.44 - mJ E total t rr Total Switching Energy - 6.92 - mJ Diode Reverse Recovery Time - 605 - Q rr Diode Reverse Recovery Charge - 4.7 - ns µC I rm Diode Peak Reverse Recovery Current - 15.5 - A TJ=25°C VGE=15V, VCC=600V, IC=40A, RG=7.5Ω TJ=25°C IF=40A, di/dt=200A/µs, VCC=600V TJ=175°C VGE=15V, VCC=600V, IC=40A, RG=7.5Ω TJ=175°C IF=40A, di/dt=200A/µs, VCC=600V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 20V 20V 15V 13V 17V 120 17V 120 90 11V IC (A) IC (A) 15V 60 13V 90 11V 60 9V 9V 30 30 VGE=7V VGE= 7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 100 120 VCE=20V 100 80 -40°C 60 175°C IF (A) IC (A) 80 25°C 60 40 175°C 40 25°C 20 -40°C 20 0 0 3 6 9 12 15 0 1 7.5 4 6 3.2 IC=80A 4.5 3 IC=40A 1.5 2 3 4 5 VF (V) Figure 4: Diode Characteristic VSD (V) VCE(sat) (V) VGE (V) Figure 3: Transfer Characteristic 80A 2.4 40A 1.6 5A 0.8 IC=20A IF=1A 0 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: May 2015 50 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=960V IC=40A Cies 12 Capacitance (pF) VGE (V) 1000 9 6 3 Coes 100 Cres 10 0 1 0 30 60 90 120 Qg (nC) Figure 7: Gate-Charge Characteristics 150 0 8 16 24 32 VCE (V) Figure 8: Capacitance Characteristic 40 600 550 500 Power Disspation (W) 450 400 350 300 250 200 150 100 50 0 25 100 75 100 125 150 175 TCASE (°C) Figure 10: Power Disspation as a Function of Case 1E-02 1E-03 80 1E-04 60 ICE(S) (A) Current rating IC (A) 50 40 VCE=1200V 1E-05 VCE=960V 1E-06 20 1E-07 0 1E-08 25 50 75 100 125 150 175 Rev.1.0: May 2015 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE (°C) Figure 11: Current De-rating www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 100 10 100 1 10 1 20 30 40 50 60 70 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=600V, Rg=7.5Ω) 10000 80 0 20 40 60 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=600V, IC=40A) 0 25 80 7 Td(off) Tf Td(on) Tr 6 VGE(TH) (V) 1000 Switching Time (ns) Td(off) Tf Td(on) Tr 1000 Switching Time (ns) 1000 Switching Time (ns) 10000 Td(off) Tf Td(on) Tr 100 5 4 3 10 2 1 1 25 Rev.1.0: May 2015 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=600V, IC=40A, Rg=7.5Ω) 175 www.aosmd.com 50 75 100 125 150 175 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 14 Eoff Eoff 12 Eon Etotal 10 8 6 4 Eon Etotal Switching Energy (mJ) SwitchIng Energy (mJ) 12 10 8 6 4 2 2 0 0 20 30 40 50 60 70 IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=600V, Rg=7.5Ω) 0 80 20 14 60 80 14 Eoff Eoff 12 12 Eon Switching Energy (mJ) Switching Energy (mJ) 40 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=600V, IC=40A) Etotal 10 8 6 4 2 Eon Etotal 10 8 6 4 2 0 0 25 Rev.1.0: May 2015 50 75 100 125 150 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=600V, IC=40A, Rg=7.5Ω) 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=40A, Rg=7.5Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 100 800 175°C 30 175°C 700 5000 25 80 600 Qrr 40 2000 175°C 0 Irm 10 200 20 175°C S 5 100 25°C 25°C 0 50 60 70 80 IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=600V, di/dt=200A/µs) 20 30 0 40 6000 60 70 80 24 Irm (A) 3000 40 25°C Trr (ns) 60 Qrr 16 Trr 500 400 12 25°C 300 8 175°C 200 175°C 20 175°C 600 4000 20 25°C 4 100 Irm 0 0 25°C S 0 300 400 500 600 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=600V, IF=40A) Rev.1.0: May 2015 50 800 80 100 40 700 5000 1000 30 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=600V, di/dt=200A/µs) 100 2000 0 20 175°C Qrr (nC) 15 25°C 300 25°C 1000 Trr 400 S 3000 20 500 200 www.aosmd.com S 60 Irm (A) Trr (ns) Qrr (nC) 4000 0 100 200 300 400 500 600 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=600V, IF=40A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.25°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: May 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: May 2015 www.aosmd.com Page 9 of 9