AOK40B120N1

AOK40B120N1 1200V, 40A Alpha IGBT TM With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary • 1200V latest Alpha IGBT (αIGBT) technology • Very low VCE(sat) and VF • High short-circuit ruggedness • Very low turn-on EMI • Easy paralleling capability • Low gate charge Qg • High efficiency and ruggedness in hard switching converters • Maximum junction temperature 175°C • Very soft and fast recovery anti-parallel diode VCE IC (TC=100°C) 1200V 40A VCE(sat) (TJ=25°C) 1.97V Applications • Motor drives • Industrial UPS Top View C TO-247 G AOK40B120N1 Orderable Part Number G C E E Package Type TO247 AOK40B120N1 Absolute Maximum Ratings TA=25°C unless otherwise noted Form Minimum Order Quantity Tube 240 Parameter Collector-Emitter Voltage Symbol VCE Gate-Emitter Voltage Continuous Collector TC=25°C Current TC=100°C VGE Pulsed Collector Current, Limited by TJmax ICM 160 A Turn-Off SOA, VCE ≤ 1200V, Limited by TJmax ILM 160 A Continuous Diode Forward Current TC=25°C TC=100°C AOK40B120N1 1200 Units V ±30 V 80 IC 40 80 IF 40 A A Diode Pulsed Current, Limited by TJmax IFM 160 A Short Circuit Withstanding Time (1) VGE=15V, VCC≤600V, TJ≤175°C tSC 10 µs Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case 600 PD 300 TJ, TSTG TL Symbol RθJA RθJC Maximum Diode Junction-to-Case RθJC (1) Allowed number of short circuits: 1s. Rev.1.0 November 2018 www.aosmd.com W -55 to 175 °C 300 °C AOK40B120N1 40 0.25 Units °C/W °C/W 0.4 °C/W Page 1 of 9 Rev.1.0 November 2018 www.aosmd.com Page 4 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0 November 2018 www.aosmd.com Page 9 of 9