AOK40B60D1

AOK40B60D1 600V, 40A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations.The soft copackaged diode is targeted for minimal losses in Welding machines, Solar Inverter and UPS applications. VCE IC (TC=100°C) 600V 40A VCE(sat) (TC=25°C) 1.85V Top View C TO-247 G C AOK40B60D1 E E G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE AOK40B60D1 600 Units V Gate-Emitter Voltage V GE ±20 V VGE Spike VSPIKE 24 V 500ns T Continuous Collector C=25°C TC=100°C Current 80 IC 40 A Pulsed Collector Current, Limited by TJmax I CM 140 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 140 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax 40 IF 20 A I FM 140 A Short circuit withstanding time VGE = 15V, VCE ≤ t SC 400V, Delay between short circuits ≥ 1.0s, TC=25°C 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.3.0: Nov 2013 PD T J , T STG TL Symbol R θ JA R θ JC R θ JC www.aosmd.com 278 111 W -55 to 150 °C 300 °C AOK40B60D1 40 0.45 Units °C/W °C/W 1.5 °C/W Page 1 of 9 AOK40B60D1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=40A Collector-Emitter Saturation Voltage VGE=0V, IC=20A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Max Units V 600 - - TJ=25°C - 1.85 2.4 TJ=125°C - 2.2 - TJ=150°C - 2.3 - TJ=25°C - 1.42 1.95 TJ=125°C - 1.4 - TJ=150°C - 1.36 - - 5.5 - TJ=25°C - - 10 TJ=125°C - - 600 TJ=150°C - - 3000 VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=40A - 16 - S - 1950 - pF - 250 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 9 - pF Qg Total Gate Charge - 45 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=40A - 17 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=25Ω I C(SC) short circuits ≥ 1.0s Rg Gate resistance f=1MHz SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) - 15.6 - nC - 140 - A - 1.45 - Ω t D(on) Turn-On DelayTime - 29 - ns tr Turn-On Rise Time - 22 - ns t D(off) Turn-Off Delay Time - 74 - ns tf Turn-Off Fall Time - 15 - ns mJ Q gc TJ=25°C VGE=15V, VCE=400V, IC=40A, RG=7.5Ω, Parasitic Ιnductance=150nH E on Turn-On Energy - 1.55 - E off Turn-Off Energy - 0.3 - mJ E total t rr Total Switching Energy - 1.85 - mJ Diode Reverse Recovery Time - 127 - Q rr Diode Reverse Recovery Charge - 0.63 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) - 8 - A t D(on) Turn-On DelayTime - 29 - ns tr Turn-On Rise Time - 24 - ns t D(off) Turn-Off Delay Time - 85 - ns tf Turn-Off Fall Time - 17 - ns E on Turn-On Energy - 1.7 - mJ E off Turn-Off Energy - 0.49 - mJ E total t rr Total Switching Energy - 2.19 - mJ Diode Reverse Recovery Time - 204 - Q rr Diode Reverse Recovery Charge - 1.2 - ns µC I rm Diode Peak Reverse Recovery Current - 11 - A TJ=25°C IF=20A,dI/dt=200A/µs,VCE=400V I rm TJ=150°C VGE=15V, VCE=400V, IC=40A, RG=7.5Ω, Parasitic Inductance=150nH TJ=150°C IF=20A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: Nov 2013 www.aosmd.com Page 2 of 9 AOK40B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 240 200 20V 20V 200 17V 160 15V 120 17V IC (A) IC (A) 160 120 13V 15V 13V 80 80 11V 11V 40 VGE= 7V 40 8V 0 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 100 100 VCE=20V -40°C -40°C 80 80 25°C 150°C 60 60 IF (A) IC (A) 9V 8V VGE=7V 9V 25°C 40 40 150°C 20 20 0 0 4 7 10 13 0.5 16 VGE(V) Fig 3: Transfer Characteristic 1.0 1.5 2.0 2.5 VF (V) Fig 4: Diode Characteristic 5 8 IC=80A 7 3 VGE(TH)(V) VCE(sat) (V) 4 IC=40A 2 6 5 4 IC=20A 1 3 0 0 25 50 75 100 125 150 175 2 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.3.0: Nov 2013 www.aosmd.com 0 30 60 90 TJ (°C) Figure 6: VGE(TH) vs. Tj 120 150 Page 3 of 9 AOK40B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=40A 12 Cies 9 Capacitance (pF) VGE (V) 1000 6 3 Coes 100 10 Cres 0 1 0 10 20 30 40 50 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic 300 250 Power Disspation (W) 200 150 100 50 0 25 50 75 100 125 150 TCASE(°C) Fig 10: Power Disspation as a Function of Case 80 Current rating IC(A) 60 40 20 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Current De-rating Rev.3.0: Nov 2013 www.aosmd.com Page 4 of 9 AOK40B60D1 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 10 Tr 100 10 1 1 0 20 40 60 80 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=7.5Ω Ω) 1000 Switching Time (nS) Td(on) 1000 100 0 20 40 60 80 Rg (Ω Ω) Figure 13: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=40A) 100 Td(off) Tf Td(on) Tr 100 10 1 0 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω Ω) Rev.3.0: Nov 2013 200 www.aosmd.com Page 5 of 9 AOK40B60D1 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5 Eoff Eoff Eon Etotal 6 4 Eon 4 Switching Energy (mJ) SwitchIng Energy (mJ) 8 Etotal 3 2 2 1 0 0 0 20 40 60 80 IC (A) Figure 15: Switching Loss vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=7.5Ω Ω) 100 0 3 20 60 80 Rg (Ω Ω) Figure 16: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=40A) 100 3 Eoff Eoff 2.5 2.5 Eon Etotal 2 Switching Energ y (mJ) Switching Energy (mJ) 40 1.5 1 0.5 Eon Etotal 2 1.5 1 0.5 0 0 0 25 75 100 125 150 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω Ω) Rev.3.0: Nov 2013 50 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=40A,Rg=7.5Ω Ω) 500 Page 6 of 9 AOK40B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2 40A 1.E-04 1.6 20A VSD (V) 5A 1.E-06 VCE=400V 1.E-08 0.4 0 25 50 75 100 125 150 175 0 Temperature (°C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature 1600 150°C 800 40 Trr 25°C 100 150°C 25°C 0 10 0 10 20 30 40 50 0 IF(A) Fig 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 2000 10 2 S 0 20 30 40 50 IS (A) Fig 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 14 250 80 1800 25°C 0 0 70 150°C 8 4 150°C 50 Irm 175 6 150 20 200 150 10 200 30 400 125 150°C Trr (nS) 50 25°C 100 250 Irm(A) Qrr 75 12 60 1000 600 50 300 70 1200 25 Temperature (°C ) Fig 20: Diode Forward voltage vs. Junction Temperature 80 1400 Qrr (nC) IF=1A 0.8 1.E-07 12 200 1600 60 1000 40 25°C 600 30 150°C 20 400 25°C 0 200 100 50 300 400 500 600 700 800 900 di/dt (A/µ µS) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=20A) Rev.3.0: Nov 2013 25°C 0 www.aosmd.com 100 200 300 6S 4 150°C 10 0 100 8 Trr 25°C Irm 200 150 S 800 10 150°C Trr (nS) 1200 50 Irm(A) Qrr 1400 Qrr (nC) 13V 1.2 S ICE(S) (A) VCE=600V 1.E-05 2 0 400 500 600 700 800 900 di/dt (A/µ µS) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=20A) Page 7 of 9 AOK40B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.3.0: Nov 2013 www.aosmd.com Page 8 of 9 AOK40B60D1 Rev.3.0: Nov 2013 www.aosmd.com Page 9 of 9