AOK40B65M3

AOK40B65M3 650V,40A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness VCE IC (TC=100°C) 650V 40A VCE(sat) (TJ=25°C) 1.95V Applications • Motor Drives • Welding Machines • UPS and Solar Inverters • Other hard switching applications Top View C TO-247 G G AOK40B65M3 Orderable Part Number C E Package Type AOK40B65M3 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE Gate-Emitter Voltage V GE E Form Minimum Order Quantity Tube 240 AOK40B65M3 650 Units V ±30 V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 120 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 120 A Continuous Diode Forward Current TC=25°C TC=100°C IF 80 40 34 17 A A Diode Pulsed Current, Limited by TJmax I FM 120 A Short circuit withstanding time 1) VGE = 15V, VCC ≤ 400V, TJ ≤ 175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 300 150 -55 to 175 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Symbol AOK40B65M3 R θ JA Maximum Junction-to-Ambient 40 R θ JC Maximum IGBT Junction-to-Case 0.5 Maximum Diode Junction-to-Case R θ JC 1.5 1) Allowed number of short circuits: 1s. Rev.1.0: April 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=40A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=40A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.95 2.45 TJ=125°C - 2.55 - TJ=175°C - 2.8 - V TJ=25°C - 2.22 2.8 TJ=125°C - 2.45 - TJ=175°C - 2.35 - - 5 - V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=175°C - - 10000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=40A - 25 - S - 1748 - pF - 166 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 62 - pF Qg Total Gate Charge - 59 - nC Q ge Gate to Emitter Charge - 15 - nC Q gc Gate to Collector Charge - 26 - nC - 188 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 13 - Ω ns I C(SC) VGE=15V, VCC=520V, IC=40A VGE=15V, VCC=400V, tsc≤5us, TJ≤175°C Short circuit collector current t D(on) Turn-On DelayTime - 40 - tr Turn-On Rise Time - 33 - ns t D(off) Turn-Off Delay Time - 125 - ns tf Turn-Off Fall Time - 14 - ns E on Turn-On Energy - 1.3 - mJ E off Turn-Off Energy - 0.5 - mJ E total t rr Total Switching Energy - 1.8 - mJ Diode Reverse Recovery Time - 365 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=40A, RG=7.5Ω - 1 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 6 - A t D(on) Turn-On DelayTime - 39 - ns tr Turn-On Rise Time - 41 - ns t D(off) Turn-Off Delay Time - 149 - ns tf Turn-Off Fall Time - 26 - ns E on Turn-On Energy - 1.4 - mJ E off Turn-Off Energy - 1.0 - mJ E total t rr Total Switching Energy - 2.4 - mJ Diode Reverse Recovery Time - 488 - Q rr Diode Reverse Recovery Charge - 1.7 - ns µC I rm Diode Peak Reverse Recovery Current - 7.4 - A TJ=25°C IF=40A,dI/dt=200A/µs,VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=40A, RG=7.5Ω TJ=175°C IF=40A,dI/dt=200A/µs,VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 20V 17V 120 20V 120 15V 17V 15V IC (A) IC (A) 13V 90 11V 60 90 13V 60 9V 11V 30 9V 30 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 VCE(V) Fig 2: Output Characteristic (Tj=175°C ) VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 100 120 VCE=20V 100 80 -40°C 60 175°C IF (A) IC (A) 80 60 40 40 25°C 20 175°C 20 25°C -40°C 0 0 3 6 9 12 15 0 1 VGE(V) Fig 3: Transfer Characteristic 3 4 5 VF (V) Fig 4: Diode Characteristic 7.5 4 6 3.2 IC=80A 80A 4.5 VSD (V) VCE(sat) (V) 2 IC=40A 3 2.4 40A 1.6 1.5 5A 0.8 IF=1A IC=20A 0 0 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: April 2015 www.aosmd.com 0 25 50 75 100 125 150 175 Temperature (°C ) Fig 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=40A Cies 12 Coes Capacitance (pF) VGE(V) 1000 9 6 3 100 Cres 10 0 1 0 15 30 45 60 75 0 8 Qg(nC) Fig 7: Gate-Charge Characteristics 16 24 32 40 VCE(V) Fig 8: Capacitance Characteristic 350 Power Disspation (W) 300 250 200 150 100 50 0 25 50 75 100 125 150 175 TCASE(°C) Fig 10: Power Disspation as a Function of Case 1E-02 100 1E-03 1E-04 60 ICE(S) (A) Current rating IC(A) 80 40 VCE=650V 1E-05 1E-06 20 VCE=520V 1E-07 0 1E-08 25 50 75 100 125 150 175 Rev.1.0: April 2015 0 25 50 75 100 125 150 175 Temperature (°C ) Fig 12: Diode Reverse Leakage Current vs. Junction Temperature TCASE(°C) Fig 11: Current De-rating www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 100 10 1 100 10 1 20 30 40 50 60 70 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω) 10000 80 0 20 40 60 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=40A) 80 0 25 175 7 Td(off) Tf Td(on) Tr 6 VGE(TH)(V) 1000 Switching Time (nS) Td(off) Tf Td(on) Tr 1000 Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 5 4 3 10 2 1 1 25 Rev.1.0: April 2015 50 75 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω) 175 www.aosmd.com 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 5 Eoff Eoff Eon Eon 4 Switching Energy (mJ) SwitchIng Energy (mJ) 5 Etotal 4 3 2 Etotal 3 2 1 1 0 0 20 30 40 50 60 70 0 80 20 3 60 80 3 Eoff Eoff Eon Eon 2.5 Switching Energ y (mJ) 2.5 Switching Energy (mJ) 40 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=40A) IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω) Etotal 2 1.5 1 0.5 Etotal 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω) Rev.1.0: April 2015 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C,VGE=15V,IC=40A,Rg=7.5Ω) Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 600 50 2000 30 500 40 25 175°C 175°C 20 300 15 25°C 200 175°C 500 Irm 25°C 0 0 0 40 50 60 70 80 IF(A) Fig 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µs) 3000 2500 175°C Qrr (nC) 2000 90 600 75 500 45 25°C 1000 30 175°C 25°C 0 50 60 70 80 IF (A) Fig 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µs) 30 40 30 20 300 15 25°C 200 15 5 25°C 0 300 500 600 700 800 di/dt (A/µS) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=40A) Rev.1.0: April 2015 S 100 25°C 0 200 10 175°C Irm 500 25 175°C Trr 400 60 Qrr 1500 5 20 Irm(A) 30 S 100 Trr (nS) 20 10 175°C 10 S 25°C Qrr 1000 20 Trr S Irm(A) 30 Trr (nS) Qrr (nC) 400 1500 400 www.aosmd.com 0 0 200 300 400 500 600 700 800 di/dt (A/µS) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=40A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: April 2015 www.aosmd.com Page 8 of 9 Rev.1.0: April 2015 www.aosmd.com Page 9 of 9