AOK40N30L

AOK40N30 300V,40A N-Channel MOSFET General Description Product Summary The AOK40N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 350@150℃ 40A RDS(ON) (at VGS=10V) < 0.085Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK40N30L Top View D TO-247 G S G S D AOK40N30 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK40N30 300 Units V ±30 V 40 25 A Pulsed Drain Current C IDM Avalanche Current C IAR 8.5 A Repetitive avalanche energy C EAR 1083 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 2167 5 357 mJ V/ns W 2.9 -55 to 150 W/ oC °C 300 °C AOK40N30 40 0.5 0.35 Units °C/W °C/W °C/W Rev0: Jul 2012 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com 135 Page 1 of 5 AOK40N30 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.28 V/ oC VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A gFS Forward Transconductance VDS=40V, ID=20A 32 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS ISMC 3.5 4.1 nΑ V 0.065 0.085 Ω 1 V Maximum Body-Diode Continuous Current 40 A Maximum Body-Diode Pulsed Current 135 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge S 2170 2718 3270 pF VGS=0V, VDS=25V, f=1MHz 280 405 530 pF 18 31 45 pF VGS=0V, VDS=0V, f=1MHz 0.6 1.4 2.1 Ω 48 60 72 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs 2.9 VGS=10V, VDS=240V, ID=40A 13 nC 21 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=40A,dI/dt=100A/µs,VDS=100V 220 275 330 Qrr Body Diode Reverse Recovery Charge IF=40A,dI/dt=100A/µs,VDS=100V 6.5 8.2 10 Body Diode Reverse Recovery Time VGS=10V, VDS=150V, ID=40A, RG=25Ω 54 ns 166 ns 152 ns 118 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using