AOK50B60D1

AOK50B60D1 600V, 50A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations.The soft copackaged diode is targeted for minimal losses in Welding machines, Solar Inverter and UPS applications. VCE IC (TC=100°C) 600V 50A VCE(sat) (TC=25°C) 1.85V Top View C TO-247 G C AOK50B60D1 E E G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE AOK50B60D1 600 Units V Gate-Emitter Voltage V GE ±20 V VGE Spike VSPIKE 24 V 500ns T Continuous Collector C=25°C TC=100°C Current 100 IC 50 A Pulsed Collector Current, Limited by TJmax I CM 168 A Turn off SOA, VCE ≤ 600V, Limited by TJmax I LM 168 A Continuous Diode Forward Current TC=25°C TC=100°C Diode Pulsed Current, Limited by TJmax 50 IF 25 A I FM 168 A Short circuit withstanding time VGE = 15V, VCE ≤ t SC 400V, Delay between short circuits ≥ 1.0s, TC=25°C 10 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum IGBT Junction-to-Case Maximum Diode Junction-to-Case Rev.3.0: Nov 2013 PD T J , T STG TL Symbol R θ JA R θ JC R θ JC www.aosmd.com 312 125 W -55 to 150 °C 300 °C AOK50B60D1 40 0.4 Units °C/W °C/W 1.2 °C/W Page 1 of 9 AOK50B60D1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage V CE(sat) VF V GE(th) I CES Min IC=1mA, VGE=0V, TJ=25°C VGE=15V, IC=50A Collector-Emitter Saturation Voltage VGE=0V, IC=25A Diode Forward Voltage VCE=600V, VGE=0V Zero Gate Voltage Collector Current Max Units V 600 - - TJ=25°C - 1.85 2.4 TJ=125°C - 2.2 - TJ=150°C - 2.3 - TJ=25°C - 1.4 1.9 TJ=125°C - 1.37 - TJ=150°C - 1.34 - - 5.6 - TJ=25°C - - 10 TJ=125°C - - 800 TJ=150°C - - 4000 VCE=5V, IC=1mA Gate-Emitter Threshold Voltage Typ V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±20V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=50A - 20 - S - 2572 - pF - 308 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCE=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 10 - pF Qg Total Gate Charge - 64 - nC Q ge Gate to Emitter Charge VGE=15V, VCE=480V, IC=50A - 27 - nC Gate to Collector Charge Short circuit collector current, Max. 1000 short circuits, Delay between VGE=15V, VCE=400V, RG=25Ω I C(SC) short circuits ≥ 1.0s Rg Gate resistance f=1MHz SWITCHING PARAMETERS, (Load Iductive, TJ=25°C) - 19 - nC - 168 - A - 1.53 - Ω t D(on) Turn-On DelayTime - 26 - ns tr Turn-On Rise Time - 70 - ns t D(off) Turn-Off Delay Time - 68 - ns tf Turn-Off Fall Time - 18 - ns mJ Q gc TJ=25°C VGE=15V, VCE=400V, IC=50A, RG=6Ω, Parasitic Ιnductance=150nH E on Turn-On Energy - 2.37 - E off Turn-Off Energy - 0.5 - mJ E total t rr Total Switching Energy - 2.87 - mJ Diode Reverse Recovery Time - 132 - Q rr Diode Reverse Recovery Charge - 0.77 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Iductive, TJ=150°C) - 9 - A t D(on) Turn-On DelayTime - 24 - ns tr Turn-On Rise Time - 74 - ns t D(off) Turn-Off Delay Time - 84 - ns tf Turn-Off Fall Time - 20 - ns E on Turn-On Energy - 2.7 - mJ E off Turn-Off Energy - 0.9 - mJ E total t rr Total Switching Energy - 3.6 - mJ Diode Reverse Recovery Time - 220 - Q rr Diode Reverse Recovery Charge - 1.46 - ns µC I rm Diode Peak Reverse Recovery Current - 12.7 - A TJ=25°C IF=25A,dI/dt=200A/µs,VCE=400V I rm TJ=150°C VGE=15V, VCE=400V, IC=50A, RG=6Ω, Parasitic Inductance=150nH TJ=150°C IF=25A,dI/dt=200A/µs,VCE=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: Nov 2013 www.aosmd.com Page 2 of 9 AOK50B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 200 20V 17V 20V 17V 200 15V 150 150 IC (A) IC (A) 15V 13V 13V 100 100 11V 11V 50 50 VGE= 7V 9V 9V VGE=7V 0 0 0 1 2 3 4 5 6 7 0 VCE(V) Fig 1: Output Characteristic (Tj=25°C ) 1 2 4 5 6 7 100 100 VCE=20V -40°C 80 80 60 60 IF (A) IC (A) 3 VCE(V) Fig 2: Output Characteristic (Tj=150°C ) 40 40 150°C 20 20 25°C 150°C -40°C 0 25°C 0 4 8 12 16 0.0 20 VGE(V) Fig 3: Transfer Characteristic 0.5 1.0 1.5 2.0 2.5 3.0 VF (V) Fig 4: Diode Characteristic 5 8 IC=100A 7 3 VGE(TH)(V) VCE(sat) (V) 4 IC=50A 2 5 4 IC=25A 1 6 3 0 0 25 50 75 100 125 150 175 Temperature (°C) Fig 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.3.0: Nov 2013 www.aosmd.com 2 0 30 60 90 TJ (°C) Figure 6: VGE(TH) vs. Tj 120 150 Page 3 of 9 AOK50B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=480V IC=50A 9 Capacitance (pF) VGE (V) 12 6 3 1000 Cies 100 Coes 10 Cres 0 1 0 10 20 30 40 50 60 70 0 5 Qg(nC) Fig 7: Gate-Charge Characteristics 10 15 20 25 30 35 40 VCE(V) Fig 8: Capacitance Characteristic 350 300 Power Disspation (W) 250 200 150 100 50 0 25 50 75 100 125 150 TCASE(°C) Fig 10: Power Disspation as a Function of Case 100 Current rating IC(A) 80 60 40 20 0 25 50 75 100 125 150 TCASE(°C) Fig 11: Current De-rating Rev.3.0: Nov 2013 www.aosmd.com Page 4 of 9 AOK50B60D1 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Switching Time (nS) 1000 Switching Time (nS) 10000 Td(off) Tf Td(on) Tr 100 10 Tr 100 10 1 1 0 20 40 60 80 IC (A) Figure 12: Switching Time vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=6Ω Ω) 1000 Switching Time (nS) Td(on) 1000 100 120 0 20 40 60 Rg (Ω Ω) Figure 13: Switching Time vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=50A) 80 Td(off) Tf Td(on) Tr 100 10 1 0 50 100 150 TJ (°C) Figure 14: Switching Time vs.Tj ( VGE=15V,VCE=400V,IC=50A,Rg=6Ω Ω) Rev.3.0: Nov 2013 200 www.aosmd.com Page 5 of 9 AOK50B60D1 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 6 Eoff Eoff Eon Switching Energy (mJ) SwitchIng Energy (mJ) 16 Eon 5 Etotal 12 8 4 Etotal 4 3 2 1 0 0 0 20 40 60 80 100 IC (A) Figure 15: Switching Loss vs. IC (Tj=150°C,VGE=15V,VCE=400V,Rg=6Ω Ω) 120 0 5 20 40 60 Rg (Ω Ω) Figure 16: Switching Loss vs. Rg (Tj=150°C,VGE=15V,VCE=400V,IC=50A) 6 Eoff Eoff 4 5 Eon Switching Energ y (mJ) Etotal Switching Energy (mJ) 80 3 2 1 0 Eon Etotal 4 3 2 1 0 0 25 75 100 125 150 TJ (°C) Figure 17: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=50A,Rg=6Ω Ω) Rev.3.0: Nov 2013 50 175 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 18: Switching Loss vs. VCE (Tj=150°C,VGE=15V,IC=50A,Rg=6Ω Ω) 500 Page 6 of 9 AOK50B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.E-03 2.2 1.E-04 1.8 50A 25A VSD (V) ICE(S) (A) VCE=600V 1.E-05 VCE=400V 1.E-06 1.4 13V 5A 1 IF=1A 1.E-07 0.6 1.E-08 0.2 0 25 50 75 100 125 150 175 200 0 50 75 100 125 150 Temperature (°C ) Fig 20: Diode Forward voltage vs. Junction Temperature Temperature (°C ) Fig 19: Diode Reverse Leakage Current vs. Junction Temperature 2000 80 150°C 150°C 8 30 25°C S 150 4 25°C 100 20 150°C 400 6 Trr (nS) 40 800 Trr 200 50 1200 Irm(A) Qrr (nC) 250 60 Qrr Irm 150°C 2 50 10 S 25°C 0 2500 25°C 0 0 0 10 20 30 40 50 60 0 IF(A) Fig 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 10 0 20 30 40 50 60 IS (A) Fig 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V,VCE=400V, di/dt=200A/µ µs) 12 250 80 70 Qrr 8 30 150°C Irm 25°C 0 200 Trr 25°C 50 4 150°C 25°C 0 400 500 600 700 800 di/dt (A/µ µS) Fig 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V,VCE=400V,IF=25A) Rev.3.0: Nov 2013 6 S 100 10 0 100 150 2 S 500 20 Irm(A) 40 25°C 150°C 60 50 1500 1000 10 200 150°C Trr (nS) 2000 Qrr (nC) 175 10 300 70 1600 25 300 www.aosmd.com 100 200 0 300 400 500 600 700 800 di/dt (A/µ µS) Fig 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V,VCE=400V,IF=25A) Page 7 of 9 AOK50B60D1 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.3.0: Nov 2013 www.aosmd.com Page 8 of 9 AOK50B60D1 Rev.3.0: Nov 2013 www.aosmd.com Page 9 of 9