AOK50B65H1

AOK50B65H1 650V, 50A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary • Latest Alpha IGBT (α IGBT) technology • 650V breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness VCE IC (TC=100°C) 650V 50A VCE(sat) (TJ=25°C) 1.9V Applications • Welding Machines • Motor Drives • UPS & Solar Inverters • Very High Switching Frequency Applications C TO-247 G G AOK50B65H1 Orderable Part Number C E Package Type AOK50B65H1 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage V CE E Form Minimum Order Quantity Tube 240 AOK50B65H1 650 Units V ±30 V Gate-Emitter Voltage V GE Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax I CM 150 A Turn off SOA, VCE≤650V, Limited by TJmax I LM 150 A Continuous Diode Forward Current TC=25°C TC=100°C IF 100 50 38 19 A A Diode Pulsed Current, Limited by TJmax I FM 150 A Short circuit withstanding time 1) VGE=15V, VCC≤300V, TJ≤175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range PD T J , T STG 375 188 -55 to 175 Maximum lead temperature for soldering TL 300 purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol AOK50B65H1 R θ JA Maximum Junction-to-Ambient 40 Maximum IGBT Junction-to-Case R θ JC 0.4 Maximum Diode Junction-to-Case R θ JC 1.4 1) Allowed number of short circuits: 1s. Rev.1.0: July 2015 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V 2.4 V CE(sat) VGE=15V, IC=50A Symbol VF Collector-Emitter Saturation Voltage VGE=0V, IC=50A Diode Forward Voltage V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=25°C - 1.9 TJ=125°C - 2.4 - TJ=175°C - 2.67 - V TJ=25°C - 2.25 2.85 TJ=125°C - 2.42 - TJ=175°C - 2.3 - - 4.9 - V V TJ=25°C - - 10 TJ=125°C - - 500 TJ=175°C - - 10000 µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=50A - 38 - S - 2181 - pF - 198 - pF DYNAMIC PARAMETERS C ies Input Capacitance VGE=0V, VCC=25V, f=1MHz C oes Output Capacitance C res Reverse Transfer Capacitance - 68 - pF Qg Total Gate Charge - 76 - nC Q ge Gate to Emitter Charge - 20 - nC Q gc Gate to Collector Charge - 32 - nC - 303 - A VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) - 13 - Ω ns I C(SC) VGE=15V, VCC=520V, IC=50A VGE=15V, VCC=300V, tsc≤5us, TJ≤175°C Short circuit collector current t D(on) Turn-On DelayTime - 37 - tr Turn-On Rise Time - 73 - ns t D(off) Turn-Off Delay Time - 141 - ns tf Turn-Off Fall Time - 32 - ns E on Turn-On Energy - 1.92 - mJ E off Turn-Off Energy - 0.85 - mJ E total t rr Total Switching Energy - 2.77 - mJ Diode Reverse Recovery Time - 261 - Q rr Diode Reverse Recovery Charge TJ=25°C VGE=15V, VCC=400V, IC=50A, RG=6Ω - 0.9 - ns µC Diode Peak Reverse Recovery Current SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 6.3 - A t D(on) Turn-On DelayTime - 36 - ns tr Turn-On Rise Time - 75 - ns t D(off) Turn-Off Delay Time - 173 - ns tf Turn-Off Fall Time - 33 - ns E on Turn-On Energy - 2.18 - mJ E off Turn-Off Energy - 1.34 - mJ E total t rr Total Switching Energy - 3.52 - mJ Diode Reverse Recovery Time - 437 - Q rr Diode Reverse Recovery Charge - 2.1 - ns µC I rm Diode Peak Reverse Recovery Current - 9 - A TJ=25°C IF=50A, dI/dt=200A/µs, VCC=400V I rm TJ=175°C VGE=15V, VCC=400V, IC=50A, RG=6Ω TJ=175°C IF=50A, dI/dt=200A/µs, VCC=400V THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: July 2015 www.aosmd.com Page 2 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 180 20V 150 15V 20V 15V 11V 120 90 9V 60 17V 150 IC (A) 120 IC (A) 13V 17V 13V 90 11V 60 9V 30 30 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE (V) Figure 2: Output Characteristic (Tj=175°C) VCE (V) Figure 1: Output Characteristic (Tj=25°C) 100 100 VCE=20V 80 60 -40°C 60 175°C 25°C IF (A) IC (A) 80 40 40 25°C 20 175°C 20 -40°C 0 0 3 6 9 12 VGE (V) Figure 3: Transfer Characteristic 15 0 0.5 1 1.5 2 2.5 3 3.5 150 175 VF (V) Figure 4: Diode Characteristic 5 5 IC=100A 4 4 VSD (V) VCE(sat) (V) 100A 3 IC=50A 2 3 2 50A 5A IC=25A 1 1 IF=1A 0 0 0 25 75 100 125 150 175 Temperature (°C) Figure 5: Collector-Emitter Saturation Voltage vs. Junction Temperature Rev.1.0: July 2015 50 www.aosmd.com 0 25 50 75 100 125 Temperature (°C) Figure 6: Diode Forward voltage vs. Junction Temperature Page 3 of 9 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VCE=520V IC=50A Cies 12 Capacitance (pF) VGE (V) 1000 9 6 Coes 100 Cres 10 3 0 1 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 8 16 24 32 VCE (V) Figure 8: Capacitance Characteristic 40 25 50 175 400 350 Power Disspation (W) 300 250 200 150 100 50 0 75 100 125 150 120 1E-02 100 1E-03 80 1E-04 ICE(S) (A) Current rating IC (A) TCASE (°C) Figure 10: Power Disspation as a Function of Case 60 VCE=650V 1E-05 40 1E-06 20 1E-07 0 VCE=520V 1E-08 25 50 75 100 125 150 175 TCASE (°C) Figure 11: Current De-rating Rev.1.0: July 2015 0 25 50 75 100 125 150 175 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. Junction Temperature www.aosmd.com Page 4 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 Td(off) Tf Td(on) Tr 1000 Td(off) Tf Td(on) Tr 1000 Switching Time (ns) Switching Time (ns) 10000 100 10 100 1 10 1 25 40 55 70 85 100 0 IC (A) Figure 13: Switching Time vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=6Ω) 1000 24 36 48 Rg (Ω) Figure 14: Switching Time vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=50A) 60 25 175 7 Td(off) Tf Td(on) Tr 6 5 VGE(TH) (V) Switching Time (ns) 10000 12 100 4 3 10 2 1 1 25 50 100 125 150 TJ (°C) Figure 15: Switching Time vs.Tj (VGE=15V, VCE=400V, IC=50A, Rg=6Ω) Rev.1.0: July 2015 75 175 www.aosmd.com 0 50 75 100 125 150 TJ (°C) Figure 16: VGE(TH) vs. Tj Page 5 of 9 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 Eoff 12 Eon 8 Etotal Switching Energy (mJ) SwitchIng Energy (mJ) Eoff Eon 9 6 3 Etotal 6 4 2 0 0 25 40 55 70 85 100 0 12 36 48 60 5 5 Eoff Eoff Eon 4 Eon 4 Etotal Switching Energy (mJ) Switching Energy (mJ) 24 Rg (Ω) Figure 18: Switching Loss vs. Rg (Tj=175°C, VGE=15V, VCE=400V, IC=50A) IC (A) Figure 17: Switching Loss vs. IC (Tj=175°C, VGE=15V, VCE=400V, Rg=6Ω) 3 2 Etotal 3 2 1 1 0 0 25 50 75 100 125 150 175 TJ (°C) Figure 19: Switching Loss vs. Tj (VGE=15V, VCE=400V, IC=50A, Rg=6Ω) Rev.1.0: July 2015 www.aosmd.com 200 250 300 350 400 450 VCE (V) Figure 20: Switching Loss vs. VCE (Tj=175°C, VGE=15V, IC=50A, Rg=6Ω) 500 Page 6 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 2500 50 175°C 20 175°C 480 16 30 Qrr 360 12 Trr 25°C S 1500 Trr (ns) 40 Irm (A) 2000 Qrr (nC) 600 60 240 25°C 1000 8 20 175°C 175°C 500 S 120 10 4 25°C 25°C Irm 0 25 40 55 70 0 0 85 0 25 100 50 16 480 30 Trr 360 12 S 25°C Trr (ns) 40 Irm (A) Qrr (nC) 100 175°C 2000 Qrr 85 20 175°C 1500 70 600 60 2500 55 IF (A) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) IF (A) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current (VGE=15V, VCE=400V, di/dt=200A/µs) 3000 40 25°C 240 1000 8 20 175°C 500 25°C Irm 0 10 25°C 0 100 4 S 0 200 300 400 500 600 di/dt (A/µs) Figure 23: Diode Reverse Recovery Charge and Peak Current vs. di/dt (VGE=15V, VCE=400V, IF=50A) Rev.1.0: July 2015 175°C 120 www.aosmd.com 0 100 200 300 400 500 600 di/dt (A/µs) Figure 24: Diode Reverse Recovery Time and Softness Factor vs. di/dt (VGE=15V, VCE=400V, IF=50A) Page 7 of 9 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT 1 10 ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance for Diode Rev.1.0: July 2015 www.aosmd.com Page 8 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.1.0: July 2015 www.aosmd.com Page 9 of 9