AOK75B60D1

AOK75B60D1 600V,75A Alpha IGBT General Description TM with Diode Product Summary • AlphaIGBT (α IGBT) technology • Low VCE(SAT) enables high efficiencies • Smooth Switching waveforms reduce EMI • Better thermal management • Minimal gate spike under high dv/dt VCE IC (TC=100°C) 600V 75A VCE(sat) (TJ=25°C) 1.72V Applications • Welding Machines • Solar Inverters • Uninterruptible Power Supplies Top View TO-247 C G AOK75B60D1 G Orderable Part Number C E E Package Type AOK75B60D1 TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage VCE Gate-Emitter Voltage VGE Form Minimum Order Quantity Tube 240 AOK75B60D1 600 Units V ±20 V Continuous Collector TC=25°C TC=100°C Current IC Pulsed Collector Current, Limited by TJmax ICM 290 A Turn off SOA, VCE ≤ 600V, Limited by TJmax ILM 290 A Continuous Diode Forward Current TC=25°C TC=100°C IF 150 75 75 37.5 A A Diode Pulsed Current, Limited by TJmax IFM 290 A Short circuit withstanding time 1) VGE=15V, VCE≤400V, TJ≤175°C tSC 10 µs Power Dissipation TC=25°C TC=100°C Junction and Storage Temperature Range PD TJ, TSTG 600 300 -55 to 175 Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds 300 Thermal Characteristics Parameter Symbol AOK75B60D1 RθJA Maximum Junction-to-Ambient 40 Maximum IGBT Junction-to-Case RθJC 0.25 Maximum Diode Junction-to-Case RθJC 0.95 1) Allowed number of short circuits: 1s. Rev.2.0: April 2018 www.aosmd.com W °C °C Units °C/W °C/W °C/W Page 1 of 9 Rev.2.0: April 2018 www.aosmd.com Page 4 of 9 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Figure C: Diode Recovery Test Circuit & Waveforms Rev.2.0: April 2018 www.aosmd.com Page 9 of 9