AOK8N80L

AOK8N80 800V,7.4A N-Channel MOSFET General Description Product Summary The AOK8N80 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 900@150℃ 7.4A RDS(ON) (at VGS=10V) < 1.63Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK8N80L Top View D TO-247 G S G S D AOK8N80 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOK8N80 800 Units V ±30 V 7.4 4.6 A Pulsed Drain Current C IDM Avalanche Current C IAR 3.8 A Repetitive avalanche energy C EAR 217 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 433 5 245 mJ V/ns W 2 -55 to 150 W/ oC °C 300 °C AOK8N80 40 0.5 0.51 Units °C/W °C/W °C/W Rev0: Jul 2012 PD TJ, TSTG TL Symbol RθJA RθCS RθJC www.aosmd.com 26 Page 1 of 5 AOK8N80 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 800 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 900 V ID=250µA, VGS=0V 0.86 V/ oC VDS=800V, VGS=0V 1 VDS=640V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A gFS Forward Transconductance VDS=40V, ID=4A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V 1.35 1.63 Ω 1 V Maximum Body-Diode Continuous Current 7.4 A Maximum Body-Diode Pulsed Current 26 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 3.3 9 S 0.72 1100 1375 1650 pF VGS=0V, VDS=25V, f=1MHz 70 101 132 pF 6 11 16 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 26 32 nC SWITCHING PARAMETERS Qg Total Gate Charge 20 VGS=10V, VDS=640V, ID=8A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A,dI/dt=100A/µs,VDS=100V 380 484 585 Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 4.5 6 7.5 Body Diode Reverse Recovery Time VGS=10V, VDS=400V, ID=8A, RG=25Ω 7.3 nC 9.1 nC 35 ns 51 ns 69 ns 41 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using